Allicdata Part #: | NTR1P02T3-ND |
Manufacturer Part#: |
NTR1P02T3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1A SOT-23 |
More Detail: | P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT... |
DataSheet: | NTR1P02T3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 165pF @ 5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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N-channel enhancement-mode vertical DMOSFET transistors like the NTR1P02T3 are an integral part of today’s constantly evolving electronics infrastructure. As reliable and efficient switching devices, they are finding increasingly varied applications.
Formally known as N-channel enhancement-mode vertical DMOSFETs (VDS), the NTR1P02T3 transistors combine the advantages of MOSFETs with those of the more traditional vertical DMOSFETs. Together, these advantages make them suitable for a wide variety of app scenarios: from those that require ultra low power and low-noise analog performance to those that benefit from the high speeds and wide dynamic ranges typical of digital integrated circuits.
Performance wise, the most important parameters for evaluation of a NTR1P02T3 are total gate charge, total output charge, and power dissipation. The total gate charge is the sum of the input and output charges that can be derived from the device’s characteristic curves. The power dissipation is the amount of power lost through device resistance, represented as Pd, the total power dissipation in watts. The gate-source capacitance is also important because it is directly correlated to the total gate charge. The static characteristics of the NTR1P02T3 such as threshold voltage and off-state drain current similarly affect performance.
When it comes to operation, the NTR1P02T3 drives an N-channel enhancement-mode vertical DMOSFET, meaning that when a positive gate-source voltage is applied, a voltage drop from rail to the drain:source junction occurs, which causes current to flow through the device. The device is only considered to be fully on at the lowest possible gate-source voltage; any that is lowered further increases the strength of current. Conversely, decreasing the gate-source voltage will decrease current. This is the basis for the working principle of NTR1P02T3 FETs.
The NTR1P02T3 is most commonly used in:
- Switched-mode power supplies
- Robotics
- Motor control
- Industrial control
- Analog and digital circuits
- AV/Video/DTV and gaming
N-channel enhancement-mode vertical DMOSFET transistors like the NTR1P02T3 are popular choice in modern electronic designs thanks to their reliable performance, robustness, and efficiency. With a wide array of application scenarios, a simple working principle, and top-notch performance, the NTR1P02T3 is certain to remain a popular choice for many years to come.
The specific data is subject to PDF, and the above content is for reference
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