PBSS4140U,115 Allicdata Electronics
Allicdata Part #:

1727-5343-2-ND

Manufacturer Part#:

PBSS4140U,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 40V 1A SOT323
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 150MHz 350mW S...
DataSheet: PBSS4140U,115 datasheetPBSS4140U,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05432
6000 +: $ 0.05130
15000 +: $ 0.04678
30000 +: $ 0.04376
75000 +: $ 0.04024
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Power - Max: 350mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PBSS4140
Description

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PBSS4140U is an NPN silicon medium power transistor designed for low noise and high gain applications, such as high fidelity audio and amplifier circuits. The device exhibits excellent gain and phase-matching characteristics and is designed to provide superior overload capability and saturation voltage. It is designed for use in a variety of audio, power, and automotive amplifier applications.

The PBSS4140U is a very versatile transistor and is a great choice for many of today\'s audio, power and automotive amplifier applications. The device features an NPN transistor configuration which provides superior gain, low noise characteristics, and a very low saturation voltage. The device also features a wide range of current gain and a wide voltage range. The device has a breakdown voltage of 115V and is capable of delivering an output current of 30A.

The working principle of PBSS4140U is based on the NPN transistor configuration. A current flows through a voltage divider consisting of two resistors, producing an amplified current at the Collector-Emitter terminals. The current then flows from the collector to the emitter and out to the circuit. The output current is controlled by the Base-Emitter voltage, and the small signal current gain is determined by the ratio of the resistor values before the base.

The PBSS4140U is ideal for various medium power applications such as high fidelity audio and amplifier circuits. Its low noise and low saturation voltage properties makes it ideal for use in amplifiers and other circuits where signal quality is of significant importance. The device can also be used in automotive applications where it can provide superior overload protection and high voltage breakdown. The device is capable of handling an output current of up to 30A, making it an excellent choice for high-power applications.

The PBSS4140U is an NPN silicon medium power transistor that is designed for low noise and high gain applications. It features an NPN transistor configuration which provides superior gain, low noise characteristics, and a very low saturation voltage. The device also features a wide range of current gain and a wide voltage range. The device has a breakdown voltage of 115V and is capable of delivering an output current of 30A. It is ideal for medium power applications such as high fidelity audio and amplifier circuits and is an excellent choice for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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