| Allicdata Part #: | 1727-2385-2-ND |
| Manufacturer Part#: |
PBSS5160QAZ |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS PNP 60V 1A DFN1010D-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 60V 1A 150MHz 325mW S... |
| DataSheet: | PBSS5160QAZ Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.05353 |
| 10000 +: | $ 0.04881 |
| 25000 +: | $ 0.04566 |
| 50000 +: | $ 0.04198 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 460mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 1A, 2V |
| Power - Max: | 325mW |
| Frequency - Transition: | 150MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-XDFN Exposed Pad |
| Supplier Device Package: | DFN1010D-3 |
| Base Part Number: | PBSS5160 |
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The PBSS5160QAZ is a NPN Transistor of the Bipolar (BJT) Single type. It is designed for use in general-purpose amplifier and switching applications. This device comes with a plastic package which is useful for electrical isolation and for providing mechanical support for the active parts of the device. The device is manufactured using an NPN silicon transistor which has a voltage range of up to 45V and an operating temperature range of -55°C to 125°C.
The PBSS5160QAZ is a versatile device and it offers a high degree of reliability in its application. It is suitable for use in applications such as audio amplifiers, switching power supplies, high/low side driver circuits, and small-signal switching applications. This device is designed to provide high switching speeds and high performance for its application. It has a high current gain and low saturation voltage, making it ideal for use in a wide range of applications.
The working principle of the PBSS5160QAZ is based on the idea of a bipolar junction transistor (BJT). This is a type of device which consists of three terminals, wherein two of them, called the collector and the base, are connected externally. The third terminal, called the emitter, is connected to the internal structures of the device.
A BJT works when there is a voltage difference between the base and emitter. This voltage difference creates an electric field, which allows current to flow from the emitter to the base. This current then flows into the collector, which allows current to flow out of the device. The amount of current flowing depends on the voltage, and this is known as the current gain of the device.
The current gain of the PBSS5160QAZ is generally very good, which makes it suitable for many applications. Another useful feature of this device is its fast switching time, which allows it to usually switch on and off quickly. This makes it ideal for applications such as high/low side driver circuits and switching power supplies, where fast switching is required.
When considering its application field, the PBSS5160QAZ is mostly suitable for general-purpose electronic applications. It is an excellent choice for audio amplifiers, switching power supplies, and for high/low side driver circuits. It is also suitable for small-signal switching applications and other low voltage, high current applications.
In conclusion, the PBSS5160QAZ is a versatile NPN Transistor of the Bipolar (BJT) Single type, which is suitable for many general-purpose electronic applications and operational amplifier circuits. This device provides excellent performance, high current gain, and fast switching speeds, which makes it an excellent choice for many applications. These features ensure that this device is an important component in many electronic projects.
The specific data is subject to PDF, and the above content is for reference
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PBSS5160QAZ Datasheet/PDF