Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PBBS4350TVL Application Field and Working Principle

Introduction

The PBBS4350TVL is a NPN 200V 9A 65W epitaxial base planar bipolar transistor. The special features of this transistor are its high breakdown voltage, high speed switching characteristics and low saturation voltage. It has a large current gain, good linearity and a wide input voltage range. With its wide range of applications, the PBBS4350TVL is one of the most widely used NPN power transistors.

Application Field

The PBBS4350TVL can be used in a range of applications from power supply, audio amplifiers, to general-purpose switching circuits. It can also be used for switching, voltage amplification, and current amplification. The high power rating, large collector current and base current, and low saturation voltage of the PBBS4350TVL make it ideal for high power switching applications.

The PBBS4350TVL is also suitable for applications in class D audio power amplifiers. The high current gain, low saturation voltage, and low base-emitter saturation voltage of the PBBS4350TVL also make it suitable for voltage amplification circuits, such as oscillators, power supplies and battery chargers.

In addition, the PBBS4350TVL can also be used in current amplifiers, such as motor driver circuits, voltage regulator circuits and inverter circuits. Its large current gain and low saturation voltage make it ideal for these applications.

Working Principle

The PBBS4350TVL is an NPN bipolar power transistor. It is made of three layers of semiconductor material; an N-type base layer, a P-type collector layer, and a P-type emitter layer. The base layer is sandwiched between the collector and emitter layers, and serves as the control element of the transistor. When a small current is applied to the base, a large current can flow between the collector and emitter layers, allowing current to be controlled with a low input power.

When a voltage is applied to the base of the PBBS4350TVL, the electrons in the N-type base layer are attracted to the positively charged P-type collector layer, forming a base-collector junction. The electrons from the base layer then combine with the holes in the collector layer, creating a current flowing from the collector to the emitter.

The PBBS4350TVL has a large current gain, which means that for every increase in the base current, there is a large increase in the collector current. The collector-emitter voltage (VCE) of the PBBS4350TVL stays constant over a wide range of collector currents, allowing for current amplification. This is why the PBBS4350TVL is used for current amplification applications, such as motor driver circuits, voltage regulator circuits, and inverter circuits.

Conclusion

The PBBS4350TVL is a NPN 200V 9A 65W epitaxial base planar bipolar transistor. It is widely used in power supply, audio amplifiers, switching circuits, voltage amplification circuits and current amplification circuits. The large current gain and low saturation voltage make it ideal for high power switching applications. The PBBS4350TVL also has a large current gain, low saturation voltage and low base-emitter saturation voltage, making it suitable for voltage amplification circuits, motor driver circuits, voltage regulator circuits, and inverter circuits.

The specific data is subject to PDF, and the above content is for reference