PBSS5240V,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1.8A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	530mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 5V
Power - Max:	900mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-666
Base Part Number:	PBSS5240

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Transistors - Bipolar (BJT) - Single

The PBSS5240V,115 is a single Bipolar Junction Transistor (BJT) produced by Diodes Incorporated. It is designed for applications in high speed switching, provides voltage isolationand is well-suited for use in industrial, commercial and consumer systems.

Application Field

The PBSS5240V,115 is mainly used as a power switch in highly efficient applications requiring high speed and low voltage isolation. It is a viable solution for consumer electronics and automotive applications, as well as power supplies, inverters, motor drivers, and many more applications. This transistor is a popular choice for applications operating in the 0.15V to 25V range because of its good performance at low voltages.

Working Principle

The PBSS5240V,115 is a single BJT, which consists of two p-type and one n-type semiconductor in an NPN configuration. The two p-type materials (collector and base) are separated by a thin layer of n-type material (emitter). The collector is connected to the power supply, the emitter is connected to the load, and the base is used as the control element.When a voltage is applied to the base, it causes a current to flow through the base-emitter junction. This current, known as the base current, creates a voltage across the base-collector junction, resulting in a collector current. As the collector current is equal to the base current multiplied by the gain of the device, the transistor can be used to regulate the current flow through the load. Peak Power Dissipation for the PBSS5240V,115 is 10W at 70 °C, and its maximum collector-emitter voltage is up to 25V for a DC operation. The collector current rating is 1A (without considering the current amplification factor of the transistor) with a power dissipation 7W when operating at 5V. In addition, the PBSS5240V,115 features complementary NPN/PNP pairs. This allows the user to take advantage of a wider range of control options. This transistor is also capable of handling higher temperature ratings, which makes it an ideal choice for high temperature environments.In addition, the PBSS5240V,115 features a high voltage gain of 100V/V, high current gain of 2.5mA/W, and good electrical characteristics. This allows the transistor to be used in a wide range of applications, including high-output power stages, power switches, switching regulator circuits, and many more.Furthermore, the PBSS5240V,115 is designed to be able to operate in temperatures up to 150°C with reliable performance, making it an ideal solution for extreme temperature environments.Finally, the PBSS5240V,115 is RoHS compliant and available in a surface-mount package. This package is designed to provide excellent thermal conductivity, making it a great choice for power applications.The PBSS5240V,115 is, therefore, a single-package bipolar junction transistor (BJT) designed for power application in high speed switching and provides voltage isolation. Its features and advantages make it the right choice for a wide range of applications in industrial, commercial, and consumer systems.

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