PBSS5350X,147

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	390mV @ 300mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1A, 2V
Power - Max:	1.6W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	PBSS5350

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PBSS5350X, 147 Application Field and Working PrincipleThe PBSS5350X, 147 is a small signal, NPN-type, surface-mount, single transistor for use in radio frequency (RF), analog and mixed-signal circuits. This transistor provides low noise and operates over an extended frequency range up to 5.8 GHz. It is capable of handling up to 200 mW of power, making it suitable for many applications.The PBSS5350X, 147 is a general purpose, bipolar, surface-mount transistor that is optimized for RF applications and is characterized by its high gain and good linearity, low noise, and good RF return loss. It is available in a 4-pin (Dual Flat No-Lead or DFN) package and is housed in a metal TO-258 case. It is designed for operation up to 5.8 GHz and can operate at frequencies as low as 500 KHz, making it suitable for a variety of applications such as FM modulators, amplifiers, oscillators, and switches.The PBSS5350X, 147 is a general-purpose NPN-type, surface-mount transistor. It is capable of handling up to 200 mW of power and is optimized for applications in which gain, linearity, and low noise are important. It is available in a 4-pin DFN package, making it ideal for use in compact circuits. In addition to its use in RF applications, the transistor can also be used in applications such as amplifiers, oscillators, and switches.The working principle of the PBSS5350X, 147 is based on the Ebers-Moll model. It is an NPN-type transistor and operates by the flow of electrons from the emitter to the collector when the base terminal is forward-biased. The gain of the transistor is determined by the emitter-to-collector dynamic forward current gain which is defined as the ratio of the change in collector current with respect to the change in emitter current, with the base current held constant. The current amplification factor of the transistor is called beta and is a measure of the efficiency of the transistor in amplifying current.The PBSS5350X, 147 is used in a variety of applications ranging from RF circuits to analog and digital circuits. It is suitable for use in FM modulators, amplifiers, oscillators, and switches. It can also be used in IF and RF stages, where high gain and good linearity are required, as well as in switching applications.In conclusion, the PBSS5350X, 147 is an ideal device for use in RF applications, where low noise operation and high gain are important. It is available in a 4-pin DFN package and is optimized for operation up to 5.8 GHz. The transistor works on the principles of the Ebers-Moll model and is capable of handling up to 200 mW of power. It has a variety of applications, ranging from RF circuits to amplifiers and switches, making it a versatile and desirable component for many applications.

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