PBSS4240XX

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	140mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 500mA, 5V
Power - Max:	500mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	PBSS4240

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Introduction

PbsS4240XX is a widely used single bipolar junction transistor (BJT) with various applications and wide range of working principles. It is a popular choice for low power control or switching applications and well-suited for applications from general-purpose to RF & microwave functions. With its wide variety of features and parameters, it can be used for various types of applications such as small RF amplifiers, logic circuits, buffers, and microwave circuits.

Applications

PbsS4240XX is primarily used in low-power control and switching applications, where the control and switching power is relatively low. It can be used in analog and digital circuits, as well as in small RF amplifiers and buffers. Some applications include Wi-Fi circuits, Bluetooth circuits, power supplies, logic circuits, and many others. For RF & microwave applications, PbsS4240XX is a flexible BJT with excellent linearity and low noise performance. In these applications, it is commonly used as a voltage gain device, a high frequency mixer, a current amplifier, and a noise generator. It has also been used in RF and microwave oscillators, amplifiers, switches and mixers.

Characteristics

PbsS4240XX is a low power control and switching BJT. With a wide variability of features and parameters, it is a suitable choice for a variety of applications. It is available in various packages and offers low package sensitivity. The operating voltage of PbsS4240XX is typically rated between 10V and 20V. With a minimum guaranteed gain of beta >3 at 1mA, it provides high current gain. It also has a low thermal resistance from junction to case or from junction to ambient. The device power dissipation ranges from 400mW to 1W, and it is able to withstand an operating temperature range between -40°C and 125°C.

Circuit Configurations & Working Principles

PbsS4240XX can be used in three primary electrical configurations: common emitter, common collector, and common base. In the common emitter configuration, the emitter leads of the BJT are connected to the ground, while the collector and base leads are connected to an exterior voltage source. In the common collector configuration, the collector leads are connected to the ground, while the base and emitter leads are connected to an exterior voltage source. In the common base configuration, the base leads are connected to the ground, while the collector and emitter leads are connected to an exterior voltage source.The working principle of PbsS4240XX is based on the flow of electrons through a semiconductor. It is a three-terminal device comprised of three semiconductors (that is, semiconductor regions) that form a junction: a collector, an emitter, and a base. When the base current is increased, more electrons are injected into the base region; this increases the collector current, and thus the output power. The voltage gain of the device is determined by the ratio of the collector current to the base current. The device’s power capability is determined by the power required to drive the base region.

Conclusion

PbsS4240XX is a widely used single bipolar junction transistor (BJT) with various applications and wide range of working principles. It is a popular choice for low power control or switching applications and well-suited for applications from general-purpose to RF & microwave functions. It can be used in three primary electrical configurations—common emitter, common collector, and common base. Its working principle is based on the flow of electrons through a semiconductor, by which a voltage gain is determined and power capability is determined by the power required to drive the base region. With its wide array of features and parameters, PbsS4240XX is a suitable choice for a wide variety of applications.

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