Allicdata Part #: | 568-7291-2-ND |
Manufacturer Part#: |
PBSS4140V,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 40V 1A SOT666 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 1A 150MHz 500mW S... |
DataSheet: | PBSS4140V,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 440mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 500mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Base Part Number: | PBSS4140 |
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The PBSS4140V,115 is a transistors - bipolar (BJT) - single device. It is a PNP general purpose transistor in a small plastic SOT-23 package. It is a high voltage Bipolar transistor, specifically designed for use in switching, pre-driver and output stages and is suitable for operation up to a maximum Vce voltage of 80V. The main purpose of the device is to switch currents, with a small current gain of 60.
Application field
The PBSS4140V,115 device has a wide variety of applications, from switching, pre-driver and output stages to various linear applications, such as low noise audio pre-amps, line drivers and high current loads. It also finds uses as class-D amplifiers, dynamic loudspeakers and line drivers. Furthermore, the high voltage and temperature range ensure the device remains fully functional even in harsh environmental conditions.
Working principle
The working principle of the PBSS4140V,115 is based on the fact that a small current, known as the base current, can control a much larger current flowing between the collector and emitter. This is known as the collector current, and is proportional to the base current. The ratio of the collector current to the base current is known as the current gain, and is typically around 60 in this type of transistor.
The base current is applied to the base terminal, which results in a current flow from the collector to the emitter, controlled by the base current. The base current then controls the current passing between the collector and the emitter of the device, thereby enabling the device to switch or amplify current flows. The device also has a voltage gain, which is the ratio of the output voltage to the input voltage, and is usually quite high for this type of transistor.
The PBSS4140V,115 is designed to operate at a collector-emitter voltage of up to 80V, and a collector current of up to 300mA. It is capable of very high frequency operation, with a 7GHz unity-gain frequency and a maximum frequency of 4.5GHz. The device is specified to operate over a temperature range of -55 to +150 degrees Celsius, making it suitable for use in high temperature or extreme environmental conditions.
Conclusion
The PBSS4140V,115 is a high voltage, high temperature, general purpose transistor designed for use in switch, pre-driver and output stages. Its features, such as its high voltage rating, high current gain and high frequency operation, make it ideal for a wide range of applications. Its versatility, high temperature rating and high frequency capabilities make it suitable for many types of switching and amplification applications.
The specific data is subject to PDF, and the above content is for reference
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