PBSS302ND,115

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PBSS302ND,115 Transistors - Bipolar (BJT) - Single: Application Field and Working Principle

PBSS302ND,115 is a NPN single Bipolar Junction Transistor (BJT). It is suitable for universal voltage and current switches, amplifiers, and designed for switching applications, analog and digital circuitry.

Application Field

The PBSS302ND,115 is equipped with low Vce(sat) for converters and power circuits. Additionally, its fast switching time of 7-9 µs, combined with its low junction temperature, makes it perfect for various applications like:

• Motor control
• Relays
• Relay replacement
• High voltage drivers
• Battery control
• Battery charging
• Lighting
• Laser/LED driver
• Light dimmers
• DC-DC converter
• High voltage switches
• DC-AC converters
• Battery charging circuits

Working Principle

BJT transistors are three-layer semiconductor devices consisting of two p-type layers surrounding a n-type layer. These layers form three terminals, the \'collector\', \'base\', and \'emitter\'. BJTs act as either current amplifiers, voltage amplifiers, or switches as the current at the base controls the current at the collector. When used as a switch, the transistor is either on or off, working as a current controlled switch.

When in operation, the transistor is biased (i.e. arranged in the circuit) by two voltages, the \'base\' voltage and the \'collector\' voltage. The current flowing through the collector is proportional to the current at the base and is responsible for controlling the \'cut-off\', \'active\', and \'saturation\' regions of operation. In order for the transistor to remain in the active region, a certain base current must remain in the circuit.

In the \'cut-off\' region, the transistor will not allow the current to flow through the base-collector junction. In the \'active\' region, the base-collector junction is forward biased and current will flow. In the \'saturation\' region, the base-collector junction is fully saturated, allowing the maximum current to flow.

Features

The PBSS302ND,115 features a maximum DC current gain of 750, an On Resistance of up to 0.75Ω, a maximum collector-emitter voltage of -30V, a maximum emitter-base voltage of -17V, maximum collector current of 2A, and a package size of 3x2mm.

The PBSS302ND,115 is designed to work with a minimum of 0.7V, making it compatible with a wide range of voltage and current applications. This makes it ideal for circuits that require a fast and efficient acting switch, such as motor control and battery charging.

The PBSS302ND,115 has a minimum on voltage of 5V, making it suitable for applications such as motor control, relays, and other high voltage circuits. Additionally, its maximum junction temperature of 176°C ensures it is able to withstand high temperature applications such as laser/LED driver and dimmable lighting.

Conclusion

The PBSS302ND,115 is a NPN single BJT transistor and an ideal choice for a variety of applications. Its low Vce(sat) and fast switching time is well-suited for high voltage and current applications, especially in motor control and battery charging circuits. Additionally, its high junction temperature of 176 °C makes it suitable for applications such as laser/LED driver and dimmable lighting.

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