Allicdata Part #: | 1727-3917-2-ND |
Manufacturer Part#: |
PBSS302PX,115 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 20V 5.1A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 5.1A 130MHz 2.1W ... |
DataSheet: | PBSS302PX,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.15744 |
2000 +: | $ 0.14355 |
5000 +: | $ 0.13428 |
10000 +: | $ 0.12502 |
25000 +: | $ 0.12348 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5.1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 230mV @ 255mA, 5.1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2A, 2V |
Power - Max: | 2.1W |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | PBSS302P |
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The PBSS302PX,115 is a single bipolar transistor, commonly referred to as a BJT. A bipolar transistor is a three-terminal semiconductor device used to switch on or off an electrical current, amplification of an input signal, or generation of electrical energy. This particular transistor falls within a family of NPN transistors, enhancing its utility and making it suitable for a variety of application uses.
The PBSS302PX,115 has a Collector-Emitter voltage of 60V, a Base-Emitter voltage of 45V, and a Collector-Base voltage of 75V. It also has a Collector current rating of 3A and a continuous collector current of 1A. Finally, its maximum power dissipation of 1.3W, makes it suitable for most standard applications.
The PBSS302PX,115 is a versatile transistor, with a wide range of potential application areas. It is commonly used in audio amplifiers, switching power supplies, and in low frequency radio frequency applications. It can also be used in general-purpose switching, and amplification. Additionally, this single transistor can be used as a substitute for dual or multiple transistors.
The working principle of the PBSS302PX,115 is fairly simple. When the Base-Emitter junction is forward biased, current flows from the base to the collector, allowing electrical current to flow from the collector to the emitter. When the Base-Emitter junction is reverse biased, current flow from the base is inhibited, which in turn reduces current from the collector to the emitter.
In summary, the PBSS302PX,115 is a single bipolar transistor. It is versatile and capable of a wide range of applications, and is useful for switching and amplification. It has a variety of electrical properties, and a maximum power dissipation of 1.3W. The working principle of the transistor is relatively straightforward, with current flowing through the collector to the emitter when the Base-Emitter junction is forward biased, and a reduction in current flow when it is reverse biased.
The specific data is subject to PDF, and the above content is for reference
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