PBSS302PX,115 Allicdata Electronics
Allicdata Part #:

1727-3917-2-ND

Manufacturer Part#:

PBSS302PX,115

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 20V 5.1A SOT89
More Detail: Bipolar (BJT) Transistor PNP 20V 5.1A 130MHz 2.1W ...
DataSheet: PBSS302PX,115 datasheetPBSS302PX,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.15744
2000 +: $ 0.14355
5000 +: $ 0.13428
10000 +: $ 0.12502
25000 +: $ 0.12348
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5.1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 230mV @ 255mA, 5.1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Power - Max: 2.1W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: PBSS302P
Description

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The PBSS302PX,115 is a single bipolar transistor, commonly referred to as a BJT. A bipolar transistor is a three-terminal semiconductor device used to switch on or off an electrical current, amplification of an input signal, or generation of electrical energy. This particular transistor falls within a family of NPN transistors, enhancing its utility and making it suitable for a variety of application uses.

The PBSS302PX,115 has a Collector-Emitter voltage of 60V, a Base-Emitter voltage of 45V, and a Collector-Base voltage of 75V. It also has a Collector current rating of 3A and a continuous collector current of 1A. Finally, its maximum power dissipation of 1.3W, makes it suitable for most standard applications.

The PBSS302PX,115 is a versatile transistor, with a wide range of potential application areas. It is commonly used in audio amplifiers, switching power supplies, and in low frequency radio frequency applications. It can also be used in general-purpose switching, and amplification. Additionally, this single transistor can be used as a substitute for dual or multiple transistors.

The working principle of the PBSS302PX,115 is fairly simple. When the Base-Emitter junction is forward biased, current flows from the base to the collector, allowing electrical current to flow from the collector to the emitter. When the Base-Emitter junction is reverse biased, current flow from the base is inhibited, which in turn reduces current from the collector to the emitter.

In summary, the PBSS302PX,115 is a single bipolar transistor. It is versatile and capable of a wide range of applications, and is useful for switching and amplification. It has a variety of electrical properties, and a maximum power dissipation of 1.3W. The working principle of the transistor is relatively straightforward, with current flowing through the collector to the emitter when the Base-Emitter junction is forward biased, and a reduction in current flow when it is reverse biased.

The specific data is subject to PDF, and the above content is for reference

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