PBSS4021PZ,115 Allicdata Electronics
Allicdata Part #:

1727-5094-2-ND

Manufacturer Part#:

PBSS4021PZ,115

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 20V 6.6A SOT223
More Detail: Bipolar (BJT) Transistor PNP 20V 6.6A 85MHz 2.6W S...
DataSheet: PBSS4021PZ,115 datasheetPBSS4021PZ,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.17464
2000 +: $ 0.15827
5000 +: $ 0.14735
10000 +: $ 0.14553
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 6.6A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 350mA, 7A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
Power - Max: 2.6W
Frequency - Transition: 85MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PBSS4021P
Description

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Introduction

The PBSS4021PZ,115 is a type of single bipolar transistor. It is often referred to as a BJT or bipolar junction transistor. It belongs to the group of three-terminal devices that are used for power switching and amplification applications. This type of transistor is often used in low-frequency, low-amplitude switching circuits that are used for power regulation, such as in motor control, audio signal amplification, and more.

Physical Characteristics and Package

The physical size of a PBSS4021PZ,115 is 0.28"x0.41" (7.1mm x 10.4mm). This size is compact and it can fit in small spaces, helping to reduce the size of a circuit. The package type of this transistor is the SOT-223, or surface mount small outline transistor. It has a 3L plastic body and is lead (Pb)-free, meaning it meets the requirements of the EU RoHS directive.

Pinout and Applications

A PBSS4021PZ,115 transistor has three pins: the Base (B) terminal, the Collector (C) terminal, and the Emitter (E) terminal. All of these pins need to be connected correctly in order to get the desired results from the transistor. The PBSS4021PZ,115 is able to perform a variety of functions: switching and amplification, motor control, audio signal amplification, and more. It is often used in low-frequency, low-amplitude switching circuits. It is also used for current amplifiers, in high-frequency and high-power applications, as well as in light-weight, low-cost switching applications.

Operating Conditions and Specifications

The operating conditions and specifications of the PBSS4021PZ,115 are as follows: Collector-Emitter Voltage (VCE): 40V; Collector Current (IC): 2A; Power Dissipation (Pd): 1.2W; Maximum Operating Temperature (Tj): 150°C; and Storage Temperature (Tstg): -60°C to 150°C.

Working Principle

The working principle of the PBSS4021PZ,115 is based on the fact that the current flowing through the Collector-Emitter circuit is controlled by the current flowing through the Base-Emitter circuit. As the current in the Base-Emitter circuit increases, the current flowing through the Collector-Emitter circuit also increases. This mutually controlling relationship between the two circuits is known as “current gain.”The PBSS4021PZ,115 works on the principle of current gain. When a current is applied to the Base-Emitter circuit, a much larger current is produced in the Collector-Emitter circuit, increasing the power output of the transistor. The current gain of the PBSS4021PZ,115 is about 40, meaning that for every unit of current applied to the base, 40 units of current is produced in the collector.

Conclusion

The PBSS4021PZ,115 is a single bipolar transistor capable of performing a variety of functions: switching, amplification, motor control, audio signal amplification, and more. It has a 3L plastic body and is lead (Pb)-free, making it compliant with EU RoHS directives. The operating conditions and specifications for the PBSS4021PZ,115 are a Collector-Emitter Voltage (VCE) of 40V, a Collector Current (IC) of 2A, a Power Dissipation (Pd) of 1.2W, and a Maximum Operating Temperature (Tj) of 150°C. Finally, it works on the principle of current gain, where a current in the Base-Emitter circuit produces a much larger current in the Collector-Emitter circuit.

The specific data is subject to PDF, and the above content is for reference

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