PBSS4032SN,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	5.7A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 300mA, 6A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 2A, 2V
Power - Max:	2.3W
Frequency - Transition:	140MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Base Part Number:	PBSS4032SN

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Introduction

The PSCS4032SN, 115 is a array of NPN Bipolar Junction Transistors (BJT) used in analog and digital applications with moderate power and moderate voltage range. The PSCS4032SN, 115 devices are designed to be used in practically any commercial, industrial, or automotive application and are characterized by their low saturation, low charge injection, low VCE(sat) and high current gain.

Specifications

The PSCS4032SN, 115 is available in a variety of types with a variety of package sizes for the application of different projects. The voltage ratings for the PSCS4032SN, 115 are as follows: Collector-Emitter Voltage-VCE : 50 Collector-Base Voltage-VCB : 50Emitter-Base Voltage-VEB : 5.0Collector Current-IC :50µAPower Rating :500mW

Features

There are many features to consider when selecting the PSCS4032SN, 115 array of Bipolar Junction Transistors. First, it is low-saturation; this means it can achieve a relatively low collector-to-emitter drop when the transistor is saturated. Second, the low-charge injection results in minimal noise and better signal to noise ratio. Lastly, the high current gains resulting from the devices provide excellent linearity.

Applications

The PSCS4032SN, 115 array of Bipolar Junction Transistors are ideal for a variety of applications, specifically those requiring power from a moderately sized source. These applications include controlling the direction of current flow, amplifying, mixing and matching high frequency signals, power switching, and controlling switching regulators. In addition to this, the PSCS4032SN, 115 can also be found in motor control applications, in computers, and in telecommunications and audio systems.

Working Principle

The PSCS4032SN, 115 array of Bipolar Junction Transistors (BJT) operate on the same principles as any BJT device in that the current flow between different terminals will be proportional to the bias voltage applied to the base of the transistor. When biased correctly, the transistor will act as an amplifier and will amplify the input signal when voltage is applied to the terminal.The conduction of a BJT is enabled through the movement of electrons in the transistor. Traditionally, the main current flow is from the Collector to the Emitter, which is controlled by the base current. When the Base current is high, the Collector-Emitter current also increases, which then increases the power gain of the transistor. When the Base current is lower, the Collector-Emitter current reduces, effectively resulting in increased signal to noise ratio.

Conclusion

The PSCS4032SN, 115 array of Bipolar Junction Transistors provides an excellent power-switching device for analog and digital applications. Because of its low saturation, low charge injection, and low VCE(sat), the PSCS4032SN, 115 can be used in virtually any application that requires moderate power and moderate voltage range. Additionally, the PSCS4032SN, 115 can also be found in motor control applications, computers, telecommunications, and audio systems.

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