PBSS4160U,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	750mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	280mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 5V
Power - Max:	415mW
Frequency - Transition:	220MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	PBSS4160

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PBSS4160U,115 Application Field and Working Principle

PBSS4160U,115 transistor belongs to the bipolar junction transistor (BJT) family, more specifically in the single transistor category. It is assembled in the standard SOT-323 surface-mount package, has a maximum power dissipation of 400 mW, and has a VceoS collector-emitter voltage of 40 V. This transistor is suitable for use in a wide range of applications.

Types of BJT and their Working Principle

Bipolar junction transistors are divided into two main categories: NPN and PNP. NPN transistors have a small current between the base and emitter that is enough to rapidly increase the current between the collector and emitter. This creates a simple electrical switch, useful for applications such as amplifying voltage. PNP transistors work by allowing a small current to flow between the base and emitter, which is then amplified by a large current between the collector and emitter. This allows the transistor to control the current or voltage between the collector and emitter, which can be used for regulating the speed of a motor or other electrical device.

PBSS4160U,115 Application Field

Due to its high power dissipation capability, the PBSS4160U,115 is particularly suitable for use in piezoelectric lamps, photoflash systems, security systems, and automotive applications. It is especially suited for use in high voltage/high power applications due to its high VceoS collector-emitter voltage rating. It also has excellent thermal and mechanical properties, making it ideal for its intended applications.

PBSS4160U,115 Working Principle

The PBSS4160U,115 follows the traditional NPN-type bipolar junction transistor (BJT) principles. It is most commonly used in an amplifying configuration, where an input current applied to the base-emitter junction creates a larger current or voltage output from the collector-emitter junction. The current flowing across the base-emitter junction is known as the base current, and the current flowing across the collector-emitter junction is known as the collector current. The current gain of the transistor is determined by its current gain ratio, known as a beta value or hFE factor. This value is typically around 200, though it can vary depending on the transistor and its conditions. To achieve this current gain, the PBSS4160U,115 requires a small base current, which is usually set by an external current source. The current gain of the transistor is also affected by the resistance between the base and emitter and the collector and emitter.

Conclusion

The PBSS4160U,115 is a NPN-type bipolar junction transistor (BJT) used in a wide range of applications, including piezoelectric lamps, photoflash systems, security systems, and automotive applications. It is particularly suited for high voltage/high power applications due to its high VceoS collector-emitter voltage rating, and excellent thermal and mechanical properties. The PBSS4160U,115 follows the traditional NPN-type BJT principles, and is primarily used as an amplifying component, with the current gain of the transistor determined by its current gain ratio, known as a beta value or hFE factor.

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