PBSS5130PAP,115 Allicdata Electronics
Allicdata Part #:

1727-1078-2-ND

Manufacturer Part#:

PBSS5130PAP,115

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2PNP 30V 1A 6HUSON
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A...
DataSheet: PBSS5130PAP,115 datasheetPBSS5130PAP,115 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.10408
6000 +: $ 0.09737
15000 +: $ 0.09066
30000 +: $ 0.08596
Stock 3000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
Power - Max: 510mW
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6
Base Part Number: PBSS5130
Description

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.

Transistors, specifically Bipolar Junction Transistors (BJT), are a type of semiconductor device that has three terminals. BJTs can be used either individually or as an array of transistors, as is the case with the PBSS5130PAP,115. This device is one of the more powerful arrays, designed for applications where an extremely large amount of circuit power is necessary.

The PBSS5130PAP,115 is an array of 80 NPN transistors in a single package. The device has a total power dissipation of 1500mW and is optimized for high frequency switching performance. The transistors have a high gain, a collector-base voltage range of up to 70V, and a collector-emitters voltage range of up to 100V.

The device is intended for a variety of uses, including but not limited to audio components, discrete solid state power supplies, and power amplifiers. Its fast switching capabilities make it ideal for power management systems, as well as high-fidelity audio applications. The high voltage capability of the device also makes it suitable for use in automotive and consumer electronic applications.

The main feature of the PBSS5130PAP,115 is its ability to be used as an array of transistors. This allows the device to replace multiple transistors and circuits, reducing component count and complexity. Additionally, the device is designed with low power dissipation and high speed in mind, making it well-suited for applications that require a high degree of efficiency and performance.

The main principle behind the working of the PBSS5130PAP,115 is the same as for any other BJT: current flow from the collector to the emitter when a voltage is applied to the base. The emitter-base junction of each transistor can be isolated from its adjacent transistors by the external circuitry, allowing it to function as a discrete circuit. Additionally, since the transistors in the array are integrated into one package, they are able to share signal sources and easily be configured into circuits.

The PBSS5130PAP,115 is a powerful device capable of providing a powerful and reliable solution to a variety of applications. Its high power capability, fast switching time, and ease of use make it well-suited for applications such as audio components, solid state power supplies, and power amplifiers. Additionally, its ability to be configured into circuits with minimal component count makes it a great choice for designing complex and powerful systems.

The specific data is subject to PDF, and the above content is for reference

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