PBSS5160PAP,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP (Dual)
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	340mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 500mA, 2V
Power - Max:	510mW
Frequency - Transition:	125MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	DFN2020-6

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PBSS5160PAP is a quadruple NPN transistor array. This device is designed to reduce many pins in a logic circuit while simplifying system designing. As it is an array device, it contains four isolated NPN transistors in a dual in-line package. This device is a multi-use device and is used in many applications. It is widely used for circuits that require amplified gains, and allows for individual biasing and connection of each transistor in a given array. This could be used in applications like amplifying clock signals, logic signals, DC/DC converters, power amplifiers, AC motor drivers and SMPS. PBSS5160PAP has a collector-to-emitter voltage rating of 62V, emitter-to-base voltage rating of 6V and collector current range of -0.003 to -0.7 A. It has a maximum power dissipation of 0.4 W and has an operating and storage temperature range of -40 to +125°C.This device is based on typical NPN transistor working principles. It has a base, a collector and an emitter. When a voltage is applied to the base, it allows a current to flow from the collector to the emitter. This current is amplified by the transistor, thereby, increasing the gain of the circuit. Designers and engineers should note, in an array device like PBSS5160PAP, tight control of the transistor parameters is essential and the Individual input and output resistors should be determined based on the application. The use of current limiting resistors on each of the output terminals ensure safe and reliable operation of the device. This device has multiple advantages over discrete transistors, such as reduced footprint, improved thermal resistance and improved reliability. With reduced power dissipation, designers can utilize these devices to design better power management circuits. This array device can also reduce noise pick-up and reduce the time spent in constructing the circuit design, since the difficult parts of the design have already been solved. In a nutshell, the PBSS5160PAP is an array NPN transistor device that is used for applications involving amplification of clock signals, logic signals, DC/DC converters, power amplifiers, AC motor drivers and SMPS. It comprises of four isolated NPN transistors with the typical NPN transistor working principles and has a collector-to-emitter voltage rating of 62V, emitter-to-base voltage rating of 6V and a maximum power dissipation of 0.4 W. This device offers multiple advantages such as reduced footprint, improved thermal resistance and improved reliability.

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