PBSS5230QAZ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	210mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 2A, 2V
Power - Max:	325mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-XDFN Exposed Pad
Supplier Device Package:	DFN1010D-3

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The PBSS5230QAZ is a NPN transistor through hole device made by NXP Semiconductors. It is part of a wide range of Transistors - Bipolar (BJT) - Singles that NXP produces, delivering reliable, cost-effective performance. This device is ideal for use in low power applications and offers integrated protection features, making it suitable for building circuits where reliability is key.The PBSS5230QAZ is a NPN transistor with a voltage rating of 40V, a current rating of 3A, and a collector-emitter voltage of 1.5V. It features a critical turn-on voltage of 0.7V and a load impedance of 130ohm. It is designed with a surge current of 1mA and an operating temperature range between -55°C and 175°C.The device has a number of features that make it suitable for a variety of applications. It has a wide transition frequency which allows for a greater current transfer capability, meaning that the transistor can switch quickly and accurately in response to changing inputs. It also has a low device capacitance, meaning that it draws less current from the output than traditional transistors.The PBSS5230QAZ offers a number of protections, including protection against contact degradation, heat shock, and overvoltage. Its low reverse leakage current means that it can protect the circuit against electrical shock and interference. Additionally, its oxide isolation area prevents shorts and noise caused by arcing or thermal expansion.When it comes to its working principle, the PBSS5230QAZ is a NPN transistor, meaning that it requires two negative and one positive power supply source. When a positive signal is sent to the base of the transistor, it acts as switch, allowing current to flow from the collector to the emitter. This allows the device to be used in a variety of electronic circuits, from amplifiers to on/off switches.The PBSS5230QAZ is an ideal choice for low power applications, such as battery-powered consumer electronics, automotive electronics, and industrial robotics. With its low power consumption and integrated protection features, this device can provide reliable performance in a variety of applications. In addition, its wide range of operating temperatures ensures that it works properly even in extreme temperatures.In conclusion, the PBSS5230QAZ is a versatile NPN transistor device made by NXP Semiconductors. It is suitable for use in a variety of applications, from low power consumer electronics to automotive and industrial electronics. It offers a number of protections, such as protection against contact degradation, heat shock, and overvoltage, and its wide operating temperature range ensures reliable performance. And with its low power consumption, the PBSS5230QAZ is a cost-effective option for building reliable circuits.

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