PBSS5260QAZ Discrete Semiconductor Products

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The P-B-S-S5260QAZ transistor is a single bipolar junction transistor (BJT) that is used for a range of applications. It is a widely used device with excellent electrical characteristics and is used in both low and high impedance circuits. It is also used in many audio applications and a few telecommunication systems.

The P-B-S-S5260Qaz is a PNP silicon transistor. It has a low frequency gain (Ft) of hFE = 75 with a maximum of 150. Its collector emitter (CE) voltage rating is 30V and its collector base (CB) voltage rating is 30V also. It has a maximum power dissipation of 1W and a collector current (Ic) rating of 100mA. The transistor’s maximum operating junction temperature is 125°C.

The P-B-S-S5260Qaz has a number of applications, but it is also used in a variety of circuits for low and high impedance outputs. One particular circuit in which the P-B-S-S5260Qaz is commonly used is the common emitter amplifier amplifier circuit. This circuit is an example of an amplifier with an emitter follower. The emitter follower circuit is characterized by its low output impedance, which makes it an ideal choice for driving low impedance loads. The P-B-S-S5260Qaz is used as the signal amplifier with the emitter follower due to its low noise and low signal distortion characteristics.

The P-B-S-S5260Qaz is also used in many audio applications due to its excellent low signal distortion characteristics. It is most commonly used in bridge amplifiers, which requires that two signal amplifiers are connected in series for increased power output. It is also used in amplifiers for low impedance outputs, since it has a low signal distortion characteristic and can easily drive low impedance loads. Additionally, the P-B-S-S5260Qaz can also be used in other circuits such as voltage regulators, switching regulators, and in some telecommunication systems.

The working principle of the P-B-S-S5260Qaz is a result of the device’s four-layer structure. The P-B-S-S5260Qaz is a four-layer structure made of silicon, boron, gallium and arsenic which when in contact with a control voltage, produces a very large current gain, making it an ideal choice for amplifying low levels of signal. The P-B-S-S5260Qaz also has a high peak-to-peak frequency response, and its high gain allows it to drive a wide range of load levels and provide excellent high-frequency performance.

The P-B-S-S5260Qaz is a widely used device due to its excellent electrical characteristics, low noise, and low signal distortion. It is most commonly used in low and high impedance circuits, but it is also used in many audio applications and some telecommunication systems. It can be used in both amplifier circuits and voltage regulator circuits for increased power output, and its four-layer structure provides it with a large current gain and peak-to-peak frequency response.

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