PBSS5320D,115 Allicdata Electronics
Allicdata Part #:

1727-5769-2-ND

Manufacturer Part#:

PBSS5320D,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 20V 3A 6TSOP
More Detail: Bipolar (BJT) Transistor PNP 20V 3A 100MHz 750mW S...
DataSheet: PBSS5320D,115 datasheetPBSS5320D,115 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05834
6000 +: $ 0.05511
15000 +: $ 0.05024
30000 +: $ 0.04700
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 750mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Base Part Number: PBSS5320
Description

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Bipolar Junction Transistors, or BJTs, are a common type of transistor used in many electronic devices. The PBSS5320D,115 is a single BJT device and has a variety of uses. This article will discuss the applications of the PBSS5320D,115, as well as its working principle.

Application Field Of PBSS5320D,115

The PBSS5320D,115 is a NPN bipolar junction transistor, and is capable of providing amplification and switching between two different circuits. Its main applications are within radio transmitters and receivers, and in amplifier circuits. It is ideal for switching between two circuits in radio applications, and for controlling the flow of current to a speaker within an audio amplifier.

The transistor can also be used in a variety of other applications, such as high-frequency signal generation, power-supply monitoring circuits, and pulse-width modulation (PWM) circuits. It is capable of providing both high-side and low-side switching and can be used in applications where the supply voltage is up to 40V and the continuous collector current is up to 1 amp.

Working Principle Of PBSS5320D,115

The PBSS5320D,115 is a NPN bipolar junction transistor, meaning it has three terminals – the base, collector, and emitter. The base terminal is used to control the Collector-Emitter current flow and the voltage between the collector and the emitter (VCE). When a current is passed through the base terminal, it creates a junction between N type and P type semiconductor material, which allows current flow between the collector and the emitter.

The current at the Collector-Emitter junction is determined by the current at the base terminal, according to the following equation: IC = β x IB,where IB is the current at the base terminal and β is the transistor\'s gain factor or "β value". The higher the β value, the higher the current gain.

The current gain can also be affected by the voltage that is applied at the base-collector junction. If the voltage VCE is increased or decreased, the gain of the transistor changes. This is known as the “Early effect”. By controlling the current and the voltage at the Collector-Emitter terminals, the transistor can be used to switch between two different circuits.

Conclusion

The PBSS5320D,115 is a single NPN bipolar junction transistor, which can be used for amplifying and switching between two different circuits. It is mainly used for radio applications and audio amplifier circuits, but can also be used for other applications such as PWM circuits. The current gain can be controlled by the current at the base terminal and the voltage at the Collector-Emitter junction, which is known as the Early effect.

The specific data is subject to PDF, and the above content is for reference

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