PBSS5330X,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5770-2-ND |
Manufacturer Part#: |
PBSS5330X,115 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 30V 3A SOT89 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 3A 100MHz 1.6W Su... |
DataSheet: | PBSS5330X,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.07263 |
2000 +: | $ 0.06658 |
5000 +: | $ 0.06255 |
10000 +: | $ 0.05851 |
25000 +: | $ 0.05380 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 320mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 175 @ 1A, 2V |
Power - Max: | 1.6W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | PBSS5330 |
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The PBSS5330X,115 is a single bipolar junction transistor (BJT) that is available through ON Semiconductor. It is a common general-purpose NPN transistor with a low collector-emitter saturation voltage and a high current-gain bandwidth. Its main application is in electronic switches, amplifiers, and drivers in device and IC designs.
The PBSS5330X,115 has a current gain the of 500 at the maximum collector current of 750 Milli-Amps (mA). Its design is based on the NPN common-base two-terminal configuration. As such, it is capable of very high current gain when operated as a switching device. The PBSS5330X,115 has a high current capacity, allowing for more efficient power delivery in many applications. It can also be used for power amplification. It has an on-state resistance of 5 Ohms and an off-state resistance of 3 Ohms.
The PBSS5330X,115 works best in signal and power amplifiers designed to improve the performance of wireless communication systems and other signal-emitting devices and systems. The transistor is primarily used to amplify low-level RF signals and increase the gain of linear signals. The reduced saturation voltage and low collector-emitter voltage make it especially suitable for voltage-controlled oscillators, phase-shifters, and other frequency-sensitive applications. The device also finds uses in other amplifier circuits and digital-to-analog converters (DACs).
The working principle of the PBSS5330X,115 is fairly straightforward. In a common-base configuration, the emitter is connected directly to ground and the base serves as the input to the transistor. When a voltage is applied to the base, the current flow from the collector to the emitter increases. This is because the high current gain of the PBSS5330X,115 increases the amount of current that flows from the collector to the emitter. As this current flows, it produces a voltage drop across the collector-emitter terminals. This voltage drop amplifies whatever signal is applied to the base and thus produces a larger signal at the collector.
The PBSS5330X,115 has many applications because of its excellent operation and reliable performance. Its high current gain and low voltage drop allow it to be used in a wide variety of devices and integrated circuits. Its main applications include switches, amplifiers, drivers, voltage-controlled oscillators, digital-to-analog converters, and other frequency-sensitive circuits.
The specific data is subject to PDF, and the above content is for reference
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