PBSS5360XX Allicdata Electronics
Allicdata Part #:

1727-7401-2-ND

Manufacturer Part#:

PBSS5360XX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PBSS5360X/SOT89/MPT3
More Detail: Bipolar (BJT) Transistor PNP 60V 3A 65MHz 1.35W Su...
DataSheet: PBSS5360XX datasheetPBSS5360XX Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 3A, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 5V
Power - Max: 1.35W
Frequency - Transition: 65MHz
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Description

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The PBSS5360XX is a single-Bipolar Junction Transistor (BJT) transistor. This device is typically used as a switch, power amplifier, and/or a current amplifier in applications where high-current and/or high-voltage capabilities are required. The PBSS5360XX\'s design and construction make it suitable for use in low-to-medium power use, as well as for driving loads with large capacitances or those that require a high degree of linearity. Additionally, this device is suitable for use in applications where a low input capacitance and fast switching speeds are desired, such as in switching regulators and power supplies.

The PBSS5360XX has a maximum collector dielectric breakdown voltage of 400V, a maximum power dissipation rating of 1.2W, a rated temperature range of -50°C to +150°C, and a maximum operating current rating of 0.2A. This device is available in both PNP and NPN configurations, with the collector being connected to the emitter in both configurations. Additionally, the device comes in five different packages: TO-220, TO-202, TO-251, TO-252, and SOT-223.

The working principle of the PBSS5360XX is based on the phenomenon of current control by reverse biasing a depletion region in a semiconductor material. This phenomenon is typically referred to as the "base-emitter reverse bias". When a voltage is applied to the base-emitter junction of the transistor, the resistance across the junction begins to increase. The amount of current that can flow through the transistor is thus controlled by this voltage. Increasing the voltage across the junction increases the resistance and reduces the current that can flow through the transistor. Conversely, decreasing the voltage across the junction decreases the resistance and increases the current that can flow through the device.

The PBSS5360XX transistor is also capable of producing gain. Gain is a measure of the current amplification in the transistor and is typically expressed as the ratio of output current to input current. Depending on the operating temperature and voltage, the PBSS5360XX has a maximum gain of 110-130.

The PBSS5360XX is a versatile transistor capable of being used in a variety of applications. It is highly suited for use in low-to-medium power circuit designs, as well as for driving loads with large capacitances or those that require a high degree of linearity. Additionally, this device is suitable for use in switching regulators and power supplies, where a low input capacitance and fast switching speeds are desired.

The specific data is subject to PDF, and the above content is for reference

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