PBSS5440D,115 Allicdata Electronics
Allicdata Part #:

1727-5775-2-ND

Manufacturer Part#:

PBSS5440D,115

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 40V 4A 6TSOP
More Detail: Bipolar (BJT) Transistor PNP 40V 4A 110MHz 1.1W Su...
DataSheet: PBSS5440D,115 datasheetPBSS5440D,115 Datasheet/PDF
Quantity: 9000
3000 +: $ 0.10766
6000 +: $ 0.10071
15000 +: $ 0.09377
30000 +: $ 0.09261
Stock 9000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 2A, 2V
Power - Max: 1.1W
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Base Part Number: PBSS5440
Description

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Bipolar junction transistors (BJT) are electronic components that are constructed of three layers, typically of doped semiconductor materials. They are commonly used as amplifying and switching devices to control current and voltage levels in a circuit. The PSS5440D, 115 is a commonly used single bipolar junction transistor. Understanding its application field and working principle is essential for those working with electrical circuits.

Application Field

The PSS5440D, 115 is most commonly used in transistor-transistor logic (TTL) circuit applications and voltage-controlled oscillators (VCO). These types of circuits require low power drives as well as high levels of precision in both controlling and switching. This device is also suited for use in two-level power switching circuits, such as those employed in switchmode power supply designs.

Working Principle

The PSS5440D, 115 employs two base-emitter junctions and one collector-emitter junction. This configuration allows the transistor to act as a current amplifying device. The current amplified through the collector-emitter junction is determined by the current passing through the base-emitter junction. When a small DC voltage is applied to the base, the collector current can be controlled. The collector current is proportional to the applied base current.

The PSS5440D, 115 is a field effect transistor (FET), which is a type of unipolar transistor. The working principle of this type of transistor is based on the modulation of electric current flow through a channel controlled by an electrostatic field. This electrostatic field is created when a voltage is applied to a gate electrode that is insulated from the channel region by a thin dielectric layer. When a voltage is applied, the electrostatic field will open or close the channel connecting the source and drain regions of the transistor. This will in turn, control the current flow.

Conclusion

The PSS5440D, 115 is a commonly used single bipolar junction transistor. It is most commonly used in transistor-transistor logic (TTL) circuit applications and voltage-controlled oscillators (VCO). Additionally, this device is also suited for use in two-level power switching circuits, such as those employed in switchmode power supply designs. The working principle of the PSS5440D, 115 is based on the modulation of electric current flow through a channel controlled by an electrostatic field. Understanding the uses and principles of the PSS5440D, 115 is important for anyone working with electrical circuits.

The specific data is subject to PDF, and the above content is for reference

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