Allicdata Part #: | 1727-1328-2-ND |
Manufacturer Part#: |
PMDPB30XN,115 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 20V 4A 6HUSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4A 490mW Surfa... |
DataSheet: | PMDPB30XN,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19435 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 10V |
Power - Max: | 490mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
These days, modern technology is no longer the same as it was a decade ago. With the development of advanced integrated circuits and semiconductor device, the ability to build powerful and reliable devices has seen vast improvements. And on this note, the PMDPB30XN,115 is one such powerful device which operates very differently from normal transistors. Let’s take a look at its application field and working principles and understand why this device stands out from the rest.
PMDPB30XN,115, otherwise known as a Power MOSFET integrated circuit, is one of the most advanced transistors available in the market. It belongs to the power MOSFETs (Metal– Oxide– Semiconductor Field Effect Transistors) array, which is a type of transistor designed specifically for use in higher power electrical systems. It is designed to switch large currents and voltages and can handle voltages up to 30V.
The main purpose of the PMDPB30XN,115 device is to switch electrical signals with high current and high voltage. It contains two parts - an N-channel MOSFET (encapsulating the Gate, Drain, and Source terminals) and a built-in power MOSFET driver. The built-in power MOSFET driver can control the Gate of the N-channel MOSFET to open and close, thus switching the electric current. In addition, the device can also be used to control high-voltage switching equipment and high-power loads.
A unique feature of the PMDPB30XN,115, is that it has an a few built-in protection features which provide a reliable operation. The ESD (electrostatic discharge) protection feature allows the device to be operated safely under high-voltage breakdown conditions. It also features a UVP (under-voltage protection) mode which prevents the device from malfunctioning when voltage drops below the specified threshold; and finally, it also has a short-circuit protection feature which ensures that the device does not sustain any permanent damage due to short-circuits.
The PMDPB30XN,115 device has a wide range of applications, such as in motor control, industrial relays, welding equipment, medical equipment, power inverters and so on. Its ability to provide fast switching performance, low power consumption and high-voltage protection make it an ideal device for switching large currents and voltages. Furthermore, its small size and low cost allow it to be widely used in many electronic systems.
In conclusion, the PMDPB30XN,115 is a very advanced and reliable electronic device. Its ability to switch high power and current without damaging itself makes it a highly desirable device for many applications. It can be used to control a wide range of high-voltage and high-power electrical circuits, as well as to provide a reliable operation. Furthermore, its compact size and low cost make it an affordable and reliable option for many electrical systems.
The specific data is subject to PDF, and the above content is for reference
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