PMDPB58UPE,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMDPB58UPE,115 Transistors - FETs, MOSFETs - Arrays

The PMDPB58UPE,115 is a type of field-effect transistor (FET) with remarkable performance features that make it suitable for application in a range of complex electronic applications. This transistor belongs to an array of FETs known as MoSFTs (Metal-Oxide Semiconductor Field-Effect Transistors), which are often used as the primary switching device in high-power circuits.

Key Features and Benefits

The primary benefit of the PMDPB58UPE,115 is its low power consumption. The device can operate with only a few milliamps of current, yet enables impressive switch speeds. It also features high current capability, making it suitable for a range of applications, including power management and energy efficiency. What’s more, its high voltage breakdown capability ensures that it can manage high power loads. Additionally, the device features excellent transient response, making it suitable for applications where load changes often. Its exceptional thermal stability further adds to its overall performance.

Applications

The PMDPB58UPE,115 is suitable for a range of electronic applications owing to its features. Specifically, it is often used in power controllers and instrumentation, such as in industrial process control systems where accurate current and voltage control is critical. It is also used in automotive and power electrical control systems, where its low power consumption is of great benefit. Additionally, it can be used to control lighting systems, including LEDs.

Working Principle

The PMDPB58UPE,115 is based on a three-terminal junction of a metal-oxide semiconductor and utilizes a gate, drain and source. When a voltage is applied across the gate and source, current is controlled between the drain and source, depending on the applied gate voltage. The drain current varies in proportion to the gate voltage, which forms the basis of the FET’s operation. By controlling the gate voltage, this transistor can be used to control the current flow in a circuit. Additionally, it can be used to switch a load on and off or to regulate the voltage output.

Conclusion

The PMDPB58UPE,115 is a field-effect transistor with excellent performance features, making it suitable for a range of applications. Its low power consumption and high voltage breakdown capability makes it suitable for applications in power management and instrumentation, as well as automotive and power electrical control systems. Moreover, its excellent transient response and thermal stability further adds to its overall performance. By utilizing the principles of a three-terminal junction of a metal-oxide semiconductor, this FET is capable of controlling the current flow in a circuit or regulating the voltage output.

The specific data is subject to PDF, and the above content is for reference