Allicdata Part #: | 1727-1331-2-ND |
Manufacturer Part#: |
PMDPB80XP,115 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2P-CH 20V 2.7A HUSON6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.7A 485mW Sur... |
DataSheet: | PMDPB80XP,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.11230 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A |
Rds On (Max) @ Id, Vgs: | 102 mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 10V |
Power - Max: | 485mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
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。Introduction to PMDPB80XP,115 Arrays
The PMDPB80XP,115 is a type of transistor array with 8 elements, each one having 2 N-channel and 2 P-channel MOSFETs formed in a monolithic integrated circuit. The set of these 8 different transistors (or FETs) are designed with a single package, allowing for a wide range of applications and quick connections in whatsoever electronic system.
Overview of Application Field
The PMDPB80XP,115 is specifically designed for logic applications that require higher power operation than the regular logic level devices. It is especially useful for applications like switching regulators, motor control, low noise amplifiers, timing and pulse generators, pulse width modulation (PWM), AM and FM detectors and many more.
The PMDPB80XP,115 boasts of efficient high power operational capability, with excellent on-state capacitance ratio and excellent noise immunity. This feature makes it an ideal fit in applications such as switching DC-DC converters, power amplifier stages and low noise signal conditioning stages. Furthermore, the 10 V gate threshold voltage make the PMDPB80XP,115 an optimal choice in power supply protection circuits.
Also, the device has a source-drain dielectric layer that ensures excellent temperature characteristics, making it an ideal choice for applications demanding robust and high frequency operation.
Overview of Working Principle
The PMDPB80XP,115 is an array of 8 MOSFETs, four each to form a balanced N-channel and P-channel, molded in a single package. Each MOSFET consists of a drain, a source, and a gate. The ultra-low on-state resistance makes it an efficient device to conduct current, while the reverse voltage blocks any current flow.
When a voltage is applied to the gate of a MOSFET, the resistance between the drain and the source decreases. This phenomenon of controlled modulation of current flow is called bulk modulation. The low on-state resistance at high frequencies makes the PMDPB80XP,115 ideal for most of the logic applications.
When both the N-channel and the P-channel are operated in synchrony, they form the so-called Controlled Elements (CE). This provides improved efficiency and higher speed operation, reducing the cost and power requirements in an electronic system.
Conclusion
The PMDPB80XP,115 transistor array is a fast and efficient transistor device, combining 8 high-performance MOSFETs into one package. Its wide applications and features, such as low on-state resistance and excellent noise immunity, make it an ideal choice for design engineers in many logic circuits. Its excellent temperature characteristics and gate threshold voltage make it suitable for use in power supply protection and other high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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