PMDPB42UN,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.9A
Rds On (Max) @ Id, Vgs:	50 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	185pF @ 10V
Power - Max:	510mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	DFN2020-6

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What is PMDPB42UN 115?

PMDPB42UN 115 is a field-effect transistors (FETs) array which consists of four transistors. It is also referred to as a multigate device, or MOSFET (metal-oxide-semiconductor field-effect transistors). The PMDPB42UN 115 is an enhancement type array, designed for use in high frequency applications, high speed switching and digital logic applications.

Applications

PMDPB42UN 115 has been designed for use in a wide range of applications, including:

• High frequency amplifiers
• High speed switching applications
• Digital logic circuits
• High speed logic gate drive
• Power driver circuits
• High frequency power switching
• High voltage circuits

The PMDPB42UN 115 FETs array can also be used as a very versatile switch, allowing for the transmission and reception of high speed digital signals. It can also be used as a power amplification device for low noise amplification.

Working Principle

The working principle of PMDPB42UN 115 is quite simple. It consists of four transistors, each with its own gate, source, and drain connections. When a low voltage signal is applied to the gate of one of the transistors, it causes electrons to be trapped in the silicon between the source and drain connections. This creates an electric field in the silicon which controls the current flow between the source and the drain.In addition to this, the PMDPB42UN 115 also has an integrated voltage divider which allows for the proper calibration of the voltage on each of the transistors. This ensures that the correct amount of current can be controlled by each of the transistors, making the PMDPB42UN 115 an ideal choice for high speed switching and digital logic applications.

Conclusion

In summary, the PMDPB42UN 115 FETs array is a versatile device suitable for use in a wide range of applications. It is an enhancement type device, meaning that it can amplify both low and high voltage signals. It has an integrated voltage divider allowing for the proper calibration of the transistors, which makes it suitable for high speed switching and digital logic applications.

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