Allicdata Part #: | 568-10757-2-ND |
Manufacturer Part#: |
PMDPB38UNE,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 20V 4A HUSON6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4A 510mW Surfa... |
DataSheet: | PMDPB38UNE,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 268pF @ 10V |
Power - Max: | 510mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMDPB38UNE,115 is a semiconductor device which belongs to Multi-Chip Power Modules (MCPM) of Infineon Technologies and it is mainly used in high voltage applications, such as as automotive, industrial, medical, lighting and telecom market. This module is based on the Insulated Gate Bipolar Transistor (IGBT) technology and is designed for high-efficiency operation with low power losses. It is mainly used in applications which require high power density due to its high current capability.The main characteristics of this module are its low thermal resistance, high peak current, high frequency switching and low switching losses. The module is composed of an assembly of leadless chips, mounted on ceramic substrate, which is connected to the power terminals and other components. The leadless chips can be used in different configurations in order to create different types of MCPMs, depending on the application.The main components used in this module are the power transistor and the protection circuits, both of which are used to increase the reliability of the module. The power transistor is made up of an array of insulated gate MOSFET (IGMOSFET) transistors, which are mounted on a special silicone-coated substrate. Each of the MOSFET transistors has a gate, a source and a drain. The gate acts as the controller for the electron flow, while the source and drain are connected to the power terminals. The protection circuit is composed of diodes, resistors and transistors, which are used to keep the transistors’ output in safe limit according to the operating condition of the module.This module is used as an ideal alternative to other power modules in applications that require high voltage and/or high current. It is also used to control switching in a wide range of applications, such as high power switching, motor load control and power conversion. The main advantage of this module is its low thermal resistance, which enables high frequency switching and low switching losses. Furthermore, due to its high current capability and high level of integration, it offers better system performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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