Allicdata Part #: | 568-10761-2-ND |
Manufacturer Part#: |
PMDPB70EN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 30V 3.5A 6DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 3.5A 510mW Sur... |
DataSheet: | PMDPB70EN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 130pF @ 15V |
Power - Max: | 510mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMDPB70EN is a MOSFET array product family developed jointly by Power-One and Infineon Technologies. It is an integrated IC solution from Power-One and Infineon, offering a complete family of fully integrated, high voltage, low power consumption and very wide breakdown voltage features for many applications.
The PMDPB70EN has 115 voltage and power handling capability with efficient switching characteristics, making it suitable for a wide range of applications. It can be used in high voltage power supplies, automotive and industrial applications, lighting and increased safety, general purpose and high-end computing, and in audio and video, mobile and consumer applications.
PMDPB70EN works in two stages: the first stage is the high voltage MOSFET output stage and the second stage is the combination of two synchronously-controlled MOSFETs. The two MOSFETs together form a double-channel MOSFET array, which is used to control the output voltage.
The first MOSFET provides the low voltage, high current output and it is used to determine the Vc voltage. The second MOSFET acts as a current source, providing the current needed to allow the Vc voltage to reach its maximum value. The two MOSFETs are synchronized using the 200kHz synchronous clock, which prevents cross-conduction and reduces power loss.
The high voltage MOSFET provides current control, voltage regulation and isolation of the output voltage from the source. The low on-resistance of the PMDPB70EN allows it to efficiently drive the load with high efficiency and low power losses, thus increasing overall system performance.
The PMDPB70EN offers versatile protection features with programmable over-voltage, over-current and over-temperature protections. The over-voltage protection prevents the output voltage from rising above a pre-defined level and the over-current protection prevents the output current from exceeding a predetermined level. Additionally, the over-temperature protection ensures the device does not exceed its maximum operating temperature.
The PMDPB70EN also offers low operation noise and EMI levels, due to its low on-resistance and fast switching performance. These features ensure that the device does not generate noise or interfere with other equipment or equipment around it.
In summary, the PMDPB70EN is an efficient, powerful and reliable MOSFET array product family, that is suitable for a wide range of applications. It offers many features such as low power consumption, high voltage and current handling capability, voltage regulation and isolation, versatile protection features and low operation noise and EMI levels. With its combination of features, the PMDPB70EN is the perfect solution for applications requiring a reliable and robust power control.
The specific data is subject to PDF, and the above content is for reference
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