Allicdata Part #: | 568-10764-2-ND |
Manufacturer Part#: |
PMDPB95XNE,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 30V 2.4A HUSON6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2.4A 475mW Sur... |
DataSheet: | PMDPB95XNE,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 143pF @ 15V |
Power - Max: | 475mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
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PMDPB95XNE 115 Application Field and Working Principle
The PMDPB95XNE115 is a power metal package transistor array manufactured by Fairchild Semiconductor, an American manufacturer manufacturer and supplier of edge-of-network semiconductor solutions. PMDPB95XNE115 is a series of MOSFET arrays. The device contains four N-channel MOSFETs with independent source and gate connections, making it suitable for high power circuit design applications.
Application Field
The PMDPB95XNE115 MOSFET array has been designed for use in a wide range of applications in both industrial and consumer electronics. It is suitable for use as an input or output device in high-power circuits in industries such as automotive, medical, and motion control. The device has low on-resistance, making it an ideal device for applications requiring high speed switching or conversion of AC or DC power.
Working Principle
When the gate voltage is applied, the PMDPB95XNE115 MOSFET array turns on by controlling the drain to source current. The drain current is controlled by the gate voltage, and in turn the source voltage is controlled by the drain voltage. The drain-source voltage can be adjusted by changing the gate voltage, which makes the PMDPB95XNE115 useful for a wide range of applications. Since the device is based on a power metal package, it is highly durable and can withstand large currents.
Features and Benefit
The PMDPB95XNE115 provides many benefits to users. It is a highly reliable device with a long lifetime, making it suitable for many industrial applications. In addition, it has low on-resistance, meaning it consumes less power and operates at higher speeds than many comparable devices. Furthermore, the PMDPB95XNE115 has a low gate charge, which means it is easy to control, even at high voltages. Finally, the device is built on a power metal package, which enables it to withstand higher temperatures and current densities than most competing products.
The specific data is subject to PDF, and the above content is for reference
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