PMDPB28UN,115 Allicdata Electronics
Allicdata Part #:

568-10755-2-ND

Manufacturer Part#:

PMDPB28UN,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET 2N-CH 20V 4.6A HUSON6
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 4.6A 510mW Sur...
DataSheet: PMDPB28UN,115 datasheetPMDPB28UN,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6
Description

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PMDPB28UN,115 transistors are a class of Field Effect Transistors (FETs) and more specifically Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).

FETs generally feature a source, gate, and drain configuration, with the source and drain serving as input and output for the signal, respectively. The gate of the FET has a voltage applied to it, and this creates the Field Effect controlling the current traveling from the source to drain. MOSFETs are a variation of FETs and are commonly used transistors due to their low power consumption and relatively high frequency range. Alongside their use as individual transistors, MOSFETs can also be used as arrays, which can be linked with other components to create digital circuits and logic gates.

The PMDPB28UN,115 transistors are a popular choice of MOSFET array due to their high current-carrying capacity, low ‘on’ resistance, and low power consumption. These transistors can be used in a multitude of applications, including signal amplification, power switching, voltage regulation, and motor control. The PMDPB28UN,115 can also be used as logic gates in digital circuits, allowing complex arrangements of signal flow and direction.

The basic principle of the PMDPB28UN,115 transistor is simple. An electric signal is applied to the gate, and this creates a field which separates the source and drain, allowing for the current to flow from source to drain. The onboard components of the transistor form a resistance matrix which allows for optimal control over the signal. With the use of an array of transistors, the flow of current can be directed in various directions and signals can be amplified or weakened depending on the arrangement.

The PMDPB28UN,115 transistors are reliable, efficient, and perfect for use in digital circuits and applications, as well as being suitable for numerous other applications. With their low power consumption, they are an ideal choice for any project, and they need very little external circuitry to support them. Additionally, these transistors are relatively cheap, allowing them to fit into almost any budget.

In conclusion, the PMDPB28UN,115 transistors are a great choice for anyone looking for a MOSFET array. Their low power consumption, high current capability, and low resistance make them an incredibly useful tool for any electronic application. From signal amplification to logic gate creation, they offer a reliable and efficient solution to any problem.

The specific data is subject to PDF, and the above content is for reference

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