Allicdata Part #: | 568-10755-2-ND |
Manufacturer Part#: |
PMDPB28UN,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET 2N-CH 20V 4.6A HUSON6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 4.6A 510mW Sur... |
DataSheet: | PMDPB28UN,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 4.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 10V |
Power - Max: | 510mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMDPB28UN,115 transistors are a class of Field Effect Transistors (FETs) and more specifically Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).
FETs generally feature a source, gate, and drain configuration, with the source and drain serving as input and output for the signal, respectively. The gate of the FET has a voltage applied to it, and this creates the Field Effect controlling the current traveling from the source to drain. MOSFETs are a variation of FETs and are commonly used transistors due to their low power consumption and relatively high frequency range. Alongside their use as individual transistors, MOSFETs can also be used as arrays, which can be linked with other components to create digital circuits and logic gates.
The PMDPB28UN,115 transistors are a popular choice of MOSFET array due to their high current-carrying capacity, low ‘on’ resistance, and low power consumption. These transistors can be used in a multitude of applications, including signal amplification, power switching, voltage regulation, and motor control. The PMDPB28UN,115 can also be used as logic gates in digital circuits, allowing complex arrangements of signal flow and direction.
The basic principle of the PMDPB28UN,115 transistor is simple. An electric signal is applied to the gate, and this creates a field which separates the source and drain, allowing for the current to flow from source to drain. The onboard components of the transistor form a resistance matrix which allows for optimal control over the signal. With the use of an array of transistors, the flow of current can be directed in various directions and signals can be amplified or weakened depending on the arrangement.
The PMDPB28UN,115 transistors are reliable, efficient, and perfect for use in digital circuits and applications, as well as being suitable for numerous other applications. With their low power consumption, they are an ideal choice for any project, and they need very little external circuitry to support them. Additionally, these transistors are relatively cheap, allowing them to fit into almost any budget.
In conclusion, the PMDPB28UN,115 transistors are a great choice for anyone looking for a MOSFET array. Their low power consumption, high current capability, and low resistance make them an incredibly useful tool for any electronic application. From signal amplification to logic gate creation, they offer a reliable and efficient solution to any problem.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BU-PMDP-0 | Mueller Elec... | 1.96 $ | 462 | STACK DOUBLE BANANA PLUG ... |
BU-PMDP-2 | Mueller Elec... | 1.96 $ | 244 | STACK DOUBLE BANANA PLUG ... |
BU-PMDP-S-9 | Mueller Elec... | 2.83 $ | 514 | 4MM BANANA SHRTNG BAR WHB... |
BU-PMDP-S-2 | Mueller Elec... | 2.83 $ | 172 | 4MM BANANA SHRTNG BAR RED... |
BU-PMDP-9 | Mueller Elec... | 1.96 $ | 68 | STACK DOUBLE BANANA PLUG ... |
PMDPB28UN,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4.6A HUS... |
PMDPB38UNE,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4A HUSON... |
PMDPB42UN,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET 2N-CH 20V 3.9A HUS... |
PMDPB56XN,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET 2N-CH 30V 3.1A HUS... |
PMDPB70EN,115 | Nexperia USA... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 3.5A 6DF... |
PMDPB95XNE,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET 2N-CH 30V 2.4A HUS... |
PMDPB760ENX | WeEn Semicon... | 0.0 $ | 1000 | MOSFET AXIALMosfet Array |
PMDPB65UP,115 | NXP USA Inc | 0.0 $ | 1000 | MOSFET 2P-CH 20V 3.5A SOT... |
PMDPB80XP,115 | Nexperia USA... | 0.13 $ | 1000 | MOSFET 2P-CH 20V 2.7A HUS... |
PMDPB70XP,115 | Nexperia USA... | 0.14 $ | 1000 | MOSFET 2P-CH 30V 2.9A 6DF... |
PMDPB85UPE,115 | Nexperia USA... | 0.14 $ | 1000 | MOSFET 2P-CH 20V 2.9A 6HU... |
PMDPB55XP,115 | Nexperia USA... | 0.23 $ | 1000 | MOSFET 2P-CH 20V 3.4A 6HU... |
BU-PMDP-S-0 | Mueller Elec... | 2.83 $ | 1732 | 4MM BANANA SHRTNG BAR BLK... |
PMDPB56XNEAX | Nexperia USA... | 0.15 $ | 1000 | MOSFET 2N-CH 30V 3.1A DFN... |
PMDPB58UPE,115 | Nexperia USA... | 0.13 $ | 3000 | MOSFET 2P-CH 20V 3.6A HUS... |
PMDPB70XPE,115 | Nexperia USA... | 0.13 $ | 9000 | MOSFET 2P-CH 20V 3A 6HUSO... |
PMDPB95XNE2X | Nexperia USA... | 0.15 $ | 3000 | MOSFET 2 N-CH 30V 2.7A 6H... |
PMDPB30XN,115 | Nexperia USA... | 0.22 $ | 1000 | MOSFET 2N-CH 20V 4A 6HUSO... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...