PMDPB70XPE,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1330-2-ND |
Manufacturer Part#: |
PMDPB70XPE,115 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2P-CH 20V 3A 6HUSON |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3A 515mW Surfa... |
DataSheet: | PMDPB70XPE,115 Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.11230 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Rds On (Max) @ Id, Vgs: | 79 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 10V |
Power - Max: | 515mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | DFN2020-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - FETs, MOSFETs - Arrays
PMDPB70XPE,115 is an extremely versatile array of power FETs.
The PMDPB70XPE,115 is a N-Channel MOSFET array with an integral back gate. It is best suited to applications where high power control is required, such as motor drives, automotive applications, and other high-current, high-voltage applications. It is extremely robust and capable of withstanding extremely high temperatures and dynamic loads.
Features of the PMDPB70XPE,115
- It contains 15 N-Channel MOSFETs.
- Internally-bootstrapped gate drive.
- Integral Planar Passivation Layer.
- Increased Gate-Source and Gate-Drain Electrode Density.
- Float-Mode Switching.
- High Treated Glass Layer for Higher Reliability and Longer Life.
- High Junction Temperature Rating.
- High-Power DC Motor Drive Capability.
- Advanced ESD Protection.
Advantages of the PMDPB70XPE,115
- It is a robust and reliable device.
- With its integral Planar Passivation Layer, it offers improved performance and higher levels of protection against current leakage and short-circuits.
- The increased Gate-Source and Gate-Drain Electrode Density provides improved switching and insulation performance.
- It is capable of operating at very high temperatures and can survive dynamic loads.
- It is designed for high power control and is best suited for high-current, high-voltage applications.
Application Fields of the PMDPB70XPE,115
The PMDPB70XPE,115 is a very versatile array of power FETs and is ideally suited for a range of applications, including:
- Motor drives
- Automotive applications
- High-current and high-voltage applications
- Power control systems
- Industrial applications
- Medical applications
Working Principle of the PMDPB70XPE,115
The PMDPB70XPE,115 is an N-Channel MOSFET array with an integral back gate. In the MOSFET array, the back gate provides an additional layer of protection, improving the performance and reliability of the system.
When the Gate voltage is zero, no current can flow through the channel. When a negative voltage is applied to the Gate, holes are created in the channel and electrons can move freely through it. This allows current to flow through the channel. The higher the Gate voltage, the larger the number of holes in the channel and the greater the current flow. Conversely, when a positive voltage is applied to the Gate, electrons are created in the channel and the current flow is decreased. Thus, the PMDPB70XPE,115 provides a convenient way to control the current flow through the channel.
The PMDPB70XPE,115 is a robust and reliable array of power FETs, suitable for a range of applications where high power control is required. With its increased Gate-Source and Gate-Drain Electrode Density, enhanced ESD protection and Float-Mode Switching, it offers increased protection, performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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