PMV65UNER Allicdata Electronics

PMV65UNER Discrete Semiconductor Products

Allicdata Part #:

1727-2707-2-ND

Manufacturer Part#:

PMV65UNER

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 20V 2.8A TO236AB
More Detail: N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount T...
DataSheet: PMV65UNER datasheetPMV65UNER Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05796
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 490mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 291pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PMV65UNER is a single-channel enhancement-mode power metal-oxide-semiconductor field-effect transistor (MOSFET). It is a three-terminal device that has a drain, a gate and a source connection. The PMV65UNER is particularly well suited for use in a variety of power switching applications such as synchronous rectification, dc-dc converters and motor drive in computers, home appliances, industrial and telecommunication equipment, where high voltage and low drain−source on-state resistance are needed. It is manufactured using high-voltage MOSFET technology and the design includes DMOS transistors with a low operating threshold.

The PMV65UNER is different from other MOSFETs in some aspects. The design includes a "floating" gate, which means that the gate is not normally in direct electrical contact with the source or drain pins. Instead, the gate is electrically insulated from the device by a silicon dioxide layer. This means that the gate is still capable of controlling the drain to source resistance, even when it is biased with a negative gate-drain voltage. This is an important feature, as it allows the device to be used in applications where a very low on-state resistance is needed, such as synchronous rectification and dc-dc conversion.

This power MOSFET can operate at very high voltages and can withstand relatively high current levels. In order to achieve such performance, the PMV65UNER incorporates a variety of design features, such as a low threshold voltage, low on-state resistance, and a high breakdown voltage. This makes it suitable for a variety of applications.

The PMV65UNER is commonly employed in a range of power switching applications. Due to its relatively low gate charge, the PMV65UNER can switch on and off quickly without the need for a large capacitor across the gate-source terminals, as is common in most power switching applications. This makes it an ideal choice for a variety of high-speed switching applications, such as switching in power supplies, power converters, dc/dc converters and motor drives.

The PMV65UNER is an excellent choice for applications that call for high voltage and low on-state resistance. It is easy to use and offers a wide range of capabilities, making it a versatile solution for many applications. It has a high current carrying capacity, which makes it ideal for applications that require large currents, such as motor drives or synchronous rectification. It also has a low gate charge, which makes it suitable for high-speed switching applications. Moreover, because it is an insulated-gate MOSFET, it offers excellent protection against electrostatic discharge, making it a reliable and robust device.

The specific data is subject to PDF, and the above content is for reference

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