PMV65UNER Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2707-2-ND |
Manufacturer Part#: |
PMV65UNER |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V 2.8A TO236AB |
More Detail: | N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount T... |
DataSheet: | PMV65UNER Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05796 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 490mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 291pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 73 mOhm @ 2.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMV65UNER is a single-channel enhancement-mode power metal-oxide-semiconductor field-effect transistor (MOSFET). It is a three-terminal device that has a drain, a gate and a source connection. The PMV65UNER is particularly well suited for use in a variety of power switching applications such as synchronous rectification, dc-dc converters and motor drive in computers, home appliances, industrial and telecommunication equipment, where high voltage and low drain−source on-state resistance are needed. It is manufactured using high-voltage MOSFET technology and the design includes DMOS transistors with a low operating threshold.
The PMV65UNER is different from other MOSFETs in some aspects. The design includes a "floating" gate, which means that the gate is not normally in direct electrical contact with the source or drain pins. Instead, the gate is electrically insulated from the device by a silicon dioxide layer. This means that the gate is still capable of controlling the drain to source resistance, even when it is biased with a negative gate-drain voltage. This is an important feature, as it allows the device to be used in applications where a very low on-state resistance is needed, such as synchronous rectification and dc-dc conversion.
This power MOSFET can operate at very high voltages and can withstand relatively high current levels. In order to achieve such performance, the PMV65UNER incorporates a variety of design features, such as a low threshold voltage, low on-state resistance, and a high breakdown voltage. This makes it suitable for a variety of applications.
The PMV65UNER is commonly employed in a range of power switching applications. Due to its relatively low gate charge, the PMV65UNER can switch on and off quickly without the need for a large capacitor across the gate-source terminals, as is common in most power switching applications. This makes it an ideal choice for a variety of high-speed switching applications, such as switching in power supplies, power converters, dc/dc converters and motor drives.
The PMV65UNER is an excellent choice for applications that call for high voltage and low on-state resistance. It is easy to use and offers a wide range of capabilities, making it a versatile solution for many applications. It has a high current carrying capacity, which makes it ideal for applications that require large currents, such as motor drives or synchronous rectification. It also has a low gate charge, which makes it suitable for high-speed switching applications. Moreover, because it is an insulated-gate MOSFET, it offers excellent protection against electrostatic discharge, making it a reliable and robust device.
The specific data is subject to PDF, and the above content is for reference
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