Allicdata Part #: | PMV65XPVL-ND |
Manufacturer Part#: |
PMV65XPVL |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 2.8A TO236AB |
More Detail: | P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount T... |
DataSheet: | PMV65XPVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08089 |
Series: | -- |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 74 mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 744pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 480mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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A PMV65XPVL is an enhancement-type high voltage MOSFET which helps provide high level of performance in many important applications. This MOSFET is designed to be extremely efficient and has an almost zero power consumption that is as low as 0.04 watts for full-range operation. It also offers an extremely low gate leak current, which makes it suitable for high voltage applications with low power consumption.
The PMV65XPVL is a field effect transistor, commonly referred to as an FET. It works by controlling the flow of current between a source and a drain supply. It is constructed from an electrically active gate material such as silicon or gallium arsenide that is insulated from a conductive gate layer. This gate layer is then connected to the source and drain electrodes, creating the voltage control element of the FET.
The PMV65XPVL is a single MOSFET that enables high voltage transistors with less current leakage and higher current carrying capability. The MOSFET has a maximum drain-source voltage of 65V and maximum drain current capabilities of up to 10A. It also has a low input capacitance of 8pf, which reduces the switching time significantly, and a high temperature capability of up to 175°C. Its current delivery is also higher due to its low drain-source impedance of 0.02Ω.
The PMV65XPVL is suitable for a number of applications including motor control, power management, and automotive electronics. In motor controller circuits, the PMV65XPVL works by quickly driving high currents for switching and commutation of a motor. Additionally, it is well suited for driving relays, solenoids, or lamp loads that require high voltage but low current. In automotive applications, this MOSFET excels at providing power and control to a number of parts. It can be used for a variety of components including fuel injection systems, transmission, exhaust, and cooling systems.
The PMV65XPVL is also widely used in telecom applications such as base stations, radio transmitters, and cell phone systems. Its low input capacitance and fast switching characteristics also make it ideal for switching and power management within a wide variety of circuits. Its low on-resistance allows it to transfer more power with less loss, making it ideal for medical applications such as medical imaging systems, portable x-ray and MRI machines, and defibrillators. It is also used in a variety of power, lighting, and industrial control applications.
In summary, the PMV65XPVL is an enhancement type high voltage MOSFET with an ultra low power consumption, a low gate leak current, and a high temperature capability. It is suitable for a wide variety of applications across many different industries, from automotive to medical to industrial. The PMV65XPVL is a single MOSFET with a maximum drain-source voltage of 65V and maximum drain current capability of up to 10A. Its low input capacitance of 8pf and high temperature capability make it an excellent choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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