| Allicdata Part #: | PMV65XP/MIR-ND |
| Manufacturer Part#: |
PMV65XP/MIR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET P-CH 20V SOT23 |
| More Detail: | P-Channel 20V 2.8A (Ta) 480mW (Ta), 4.17W (Tc) Sur... |
| DataSheet: |  PMV65XP/MIR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 74 mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 744pF @ 20V |
| FET Feature: | -- |
| Power Dissipation (Max): | 480mW (Ta), 4.17W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-236AB |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The PMV65XP/MIR is a a single enhancement mode field-effect transistor (FET) that finds application in a range of modern and legacy electronics. The FET, which is manufactured as part of a package-on-package solution, features an on-state resistance of 6.5 Ω and a current rating of 10A continuous. Additionally, it offers a switching loss, which is much lower than that of a comparable bipolar transistor.
The PMV65XP/MIR FET works on the principle of electrostatic control, wherein electrons are forced to move due to an electric field. This electric field is created by the three terminals, i.e., the source, gate, and drain, of the FET. By applying a voltage applied to the gate terminal, a channel between the drain and source is opened and a current passes through it.
The PMV65XP/MIR is used in a range of electronic applications due to the combination of its high current rating and low switching losses. Its applications include automotive electronics, such as voltage regulators and fuel pumps, as well as audio amplifiers, embedded systems, and medical electronics. Additionally, the FETís low switching losses make it ideal for high-frequency applications, such as RF power amplifiers and mixers.
The PMV65XP/MIR FET is also well-suited to industrial control applications due to its robust design. It can work with a wide range of supply voltages (up to 52V) and can support current spikes up to 25A. Additionally, the FET ensures reliable operation in harsh environmental conditions, such as high temperatures and high humidity.
In summary, the PMV65XP/MIR is a single enhancement mode FET that offers a range of qualities, from its low switching loss to its robust design. Its wide range of applications, from medical electronics to industrial control applications, make it a reliable and versatile solution for electronic designs.
The specific data is subject to PDF, and the above content is for reference
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