PMV65XPER Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2311-2-ND |
Manufacturer Part#: |
PMV65XPER |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V SOT23 |
More Detail: | P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Sur... |
DataSheet: | PMV65XPER Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06768 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 480mW (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 618pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 2.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMV65XPER MOSFETs are transistors that are robust, reliable, and most commonly used in power management systems. These devices are used in a wide range of applications such as high voltage switching, feedback, voltage regulation, and protection of power supplies. PMV65XPER MOSFETs offer the flexibility of high and low side control, as well as adjustable switching speed.
The PMV65XPER MOSFET has a p-channel depletion mode structure, which allows for the device to be corrected and operate accurately when an external gate voltage is applied. The high voltage capability of the PMV65XPER allows it to operate efficiently in a wide range of applications, while the low on-resistance ensures that a low cost and efficiency are maintained. The device also features excellent Safe Operating Area (SOA) characteristics, providing maximum protection against over-current and over-temperature conditions.
The PMV65XPER MOSFET works on the principle of majority carriers. A majority carrier is an electron or photon. When a positive voltage is applied on the gate, it causes a change in the number of majority carriers in the channel region, which results in an inversion layer. This inversion layer or depletion region, modifies the voltage and electric field across the channel, thus controlling the current in the channel and voltage across the drain-source.
Due to the high voltage and transverse mobility, the PMV65XPER MOSFETs can operate significantly higher frequencies than the conventional BJTs. This makes the PMV65XPER well suited for high power, high frequency switching applications. This makes PMV65XPER the ideal choice for applications such as switched mode power supplies, solar inverters, and power amplifiers.
The PMV65XPER MOSFETs also offer protection features such as an over-temperature protection (OTP), a gate-to-source voltage (VGS) protection, and a drain-to-source voltage (VDS) protection. These features help protect the device in case of a fault. This makes the PMV65XPER MOSFETs an excellent choice for rugged, reliable power management applications.
In conclusion, PMV65XPER MOSFETs are a great choice for power management applications such as high voltage switching, feedback, voltage regulation, and protection of power supplies. The devices offer robust and reliable operation, as well as adjustable switching speed and over-temperature protection. The PMV65XPER MOSFETs also feature a high voltage capability, excellent SOA characteristics, and fast switching speeds, which make them the ideal choice for high power, high frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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