PMV65XP,215 Allicdata Electronics

PMV65XP,215 Discrete Semiconductor Products

Allicdata Part #:

1727-3124-2-ND

Manufacturer Part#:

PMV65XP,215

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CH 20V 2.8A SOT-23
More Detail: P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount T...
DataSheet: PMV65XP,215 datasheetPMV65XP,215 Datasheet/PDF
Quantity: 84000
3000 +: $ 0.09205
Stock 84000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 480mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 744pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 74 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMV65XP,215 application field and working principle

PMV65XP,215 is type of metal oxide semiconductor field effect transistor (MOSFET). It is commonly used for switching and amplifying in various applications. This type of field effect transistor (FET) is of the p-channel enhancement type.

A FET is a type of transistor whose action is controlled by an electric field instead of by a change in the current. As a voltage is applied to the control gate of an MOSFET it controls the current that passes through the drain/source terminals. This type of transistor has three terminals, the source, drain and gate. The gate is insulated from the semiconductor material and is used to control the current flow between the source and drain. The voltage applied to the gate controls the amount of current that can flow through the device.

The PMV65XP,215 is a P-channel enhancement MOSFET. This means that the current is controlled by the voltage applied to the gate. When the gate voltage is more positive than the drain, charge carriers, in this case electrons, are created in the channel between the source and drain and the device becomes conducting. The voltage can be adjusted to different levels in order to control the current between the source and drain.

The PMV65XP,215 can be used for many different applications. For example, it can be used as a switch in digital circuits, as an amplifier in audio systems, as a switch in power supplies, and in many other applications. This type of transistor can also be used in high voltage and high power applications as it can handle up to 200V and up to 175W.

The PMV65XP,215 is also well suited for use in low noise applications, as it has low voltage noise figure and a low input capacitance. It is also able to operate at high frequencies, due to its fast switching time. This is why it is often used in consumer electronics such as mobile phones, PCs and other electronic devices.

In summary, the PMV65XP,215 is a P-channel enhancement MOSFET which can be used for various applications, from switching and amplifying circuits, to high voltage and power applications. It is capable of operating at high frequencies and is suitable for low noise applications.

The specific data is subject to PDF, and the above content is for reference

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