PMV60EN,215 Discrete Semiconductor Products |
|
Allicdata Part #: | 568-2357-2-ND |
Manufacturer Part#: |
PMV60EN,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 4.7A SOT-23 |
More Detail: | N-Channel 30V 4.7A (Tc) 280mW (Tj) Surface Mount T... |
DataSheet: | PMV60EN,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280mW (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMV60EN is a silicon semiconductor manufactured by Infineon Technologies, which belongs to the family of transistors and can be classified as Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in the category of single devices.
PMV60EN is a fast switching device with a break drain voltage of 200 V and Drain source voltage of 60V. The gate source voltage is 5V or negative gate source voltage. It can be used in high power switching applications due to its low resistance and fast switching characteristics. PMV60EN is ideal for device applications in low voltage switching like switching of power electronic circuits, power supplies, and other high power applications.
The working principle of PMV60EN is based on the field effect technology which uses an electric field to modulate the electrical properties of a semiconductor device. This technology helps to reduce the power loss compared to other switching device. The operating voltage of the PMV60EN is from -5V to +5V. When a potential difference of approximately 4V is applied between the gate and the source, the device becomes operational.
The PMV60EN is comprised of two electrodes, the source and the drain, separated by an insulator (Metallic Oxide Semiconductor (MOS)). A conductive channel is formed between these two electrodes which carries the current when the voltage is applied between the gate and the source. The channel\'s resistance is controlled by the electric field generated between the two electrodes, and can be adjusted by the gate voltage applied. This electric field can be controlled by applying an external voltage and total impedance can be changed depending on the type of current and voltage applied.
The PMV60EN is suitable for high frequency application due to its low input capacitance. Its fast switching capabilities also make it suitable for applications such as power supplies, motor control circuits, solenoid, and other switch control functions. Moreover, it provides better noise immunity since it has a high input resistance and low leakage current.
PMV60EN is ideal for high power applications due to its low drain source on state resistance (RDS(on)) and high threshold voltage (Vth). It can handle large voltages, which makes it suitable for large power and high-frequency switching applications. Furthermore, it has optimized thermal resistance which allows for enhanced conduction without heating up and thus improves the overall efficiency of the device.
PMV60EN is available in specific packages such as TO-220,SO8,DFN6, power packages, multipackage and others. The package size and type are determined by the application requirements, such as the size and shape of the board space, environmental conditions, and the maximum power required from the device. The price of PMV60EN varies depending on the package size and performance requirements of the application.
In conclusion, PMV60EN is a fast switching device with low on-state resistance, high threshold voltage, optimized thermal resistance and fast switching capabilities, suitable for high power and high frequency applications. Moreover, it is easy to integrate PMV60EN with other components, providing better noise immunity and improved efficiency of the overall device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PMV6-P10-L | Panduit Corp | 0.0 $ | 1000 | CONN WIRE PIN TERM 10-12A... |
PMV65UN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 2A SOT-23... |
PMV65UNEAR | Nexperia USA... | 0.07 $ | 1000 | MOSFET N-CH 20V 2.8A TO23... |
PMV60EN,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V 4.7A SOT-... |
PMV65XP/MIR | Nexperia USA... | 0.0 $ | 1000 | MOSFET P-CH 20V SOT23P-Ch... |
PMV65XPVL | Nexperia USA... | 0.09 $ | 1000 | MOSFET P-CH 20V 2.8A TO23... |
PMV65ENEAR | Nexperia USA... | -- | 1000 | MOSFET N-CH 20V TO-236ABN... |
PMV65XPER | Nexperia USA... | 0.08 $ | 1000 | MOSFET P-CH 20V SOT23P-Ch... |
PMV65XPEAR | Nexperia USA... | -- | 12000 | MOSFET P-CH 20V SOT23P-Ch... |
PMV65UNER | Nexperia USA... | 0.06 $ | 1000 | MOSFET N-CH 20V 2.8A TO23... |
PMV65XP,215 | Nexperia USA... | 0.11 $ | 84000 | MOSFET P-CH 20V 2.8A SOT-... |
PMV6-5FB-2K | Panduit Corp | 0.25 $ | 1000 | CONN SPADE TERM 10-12AWG ... |
PMV6-35RB-2K | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-3RB-2K | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-4RB-2K | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-4R-L | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-4R-X | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-6RB-2K | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-6R-L | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-6R-X | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-8RB-2K | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-8R-L | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-8R-X | Panduit Corp | 0.0 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-5F-L | Panduit Corp | 0.61 $ | 1000 | CONN SPADE TERM 10-12AWG ... |
PMV6-5R-L | Panduit Corp | 0.65 $ | 500 | CONN RING CIRC 10-12AWG M... |
PMV6-4FB-2K | Panduit Corp | 0.0 $ | 1000 | CONN SPADE TERM 10-12AWG ... |
PMV6-4F-L | Panduit Corp | 0.0 $ | 1000 | CONN SPADE TERM 10-12AWG ... |
PMV6-6FB-2K | Panduit Corp | 0.0 $ | 1000 | CONN SPADE TERM 10-12AWG ... |
PMV6-6F-L | Panduit Corp | 0.0 $ | 1000 | CONN SPADE TERM 10-12AWG ... |
PMV6-5RB-2K | Panduit Corp | 0.22 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-3R-L | Panduit Corp | 0.61 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-3R-X | Panduit Corp | 0.78 $ | 1000 | CONN RING CIRC 10-12AWG M... |
PMV6-5R-X | Panduit Corp | 0.78 $ | 1000 | CONN RING CIRC 10-12AWG M... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...