
Allicdata Part #: | R6011KNX-ND |
Manufacturer Part#: |
R6011KNX |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 11A TO220FM |
More Detail: | N-Channel 600V 11A (Tc) 53W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 454 |
1 +: | $ 1.21590 |
10 +: | $ 1.07793 |
100 +: | $ 0.85201 |
500 +: | $ 0.66074 |
1000 +: | $ 0.52164 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 53W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The R6011KNX is a single N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is widely used as an electronic switch in a variety of applications, including but not limited to: controlling power to a motor, switching lights, and even controlling the flow of current in a circuit. This article will focus on the application field and working principle of the R6011KNX.
Application of the R6011KNX
The R6011KNX is an ideal choice for switching applications. Its low-side switch rating makes it suitable for medium- and low-power applications, such as motor control and lighting. A low-side switch is a single-pole, single-throw switch that changes the direction of current flow: when the switch is off, current flows from the load to the supply, and when the switch is on, current flows from the supply to the load.
The R6011KNX\'s low power rating also makes it an ideal choice for use as a signal switch. Its low on-resistance ensures that it can operate quickly and efficiently. This makes it suitable for use in applications such as USB hub controllers, sound synthesizers, and even computer-automated test equipment.
Working Principle
The R6011KNX is an N-channel enhancement-mode MOSFET. This type of transistor is often referred to as a "field effect transistor" or FET for short. The FET works by using an electric field to control the flow of electrons. This electric field is produced by the gate-source voltage that is applied to the transistor.
When a positive voltage is applied to the gate-source junction of the R6011KNX, a region of high electron density, called an "inversion layer" forms in the region between the gate electrode and the channel. This causes a conductive path to form between the drain and the source, allowing current to flow from the drain to the source.
When the gate-source voltage is reversed, the inversion layer disappears and the conductive path between the drain and the source is broken, causing the switch to turn off. The R6011KNX\'s low OFF-state resistance ensures that the current flowing through the transistor is greatly reduced when the switch is off, making it suitable for low-power applications.
Conclusion
The R6011KNX is a single N-channel enhancement-mode MOSFET that is ideal for use in a variety of low-power applications, such as motor control and signal switching. Its low on-resistance ensures that it can switch quickly and efficiently. By understanding the application field and working principle of the R6011KNX, engineers can make better use of this device in their designs.
The specific data is subject to PDF, and the above content is for reference
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