R6015FNX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The R6015FNX is an advanced field-effect transistor (FET) designed for use in high-speed switching applications. It is a single, low-voltage, low-current, low-power device that can be used in many different types of circuit applications. The design and construction of the R6015FNX are optimized for fast-switching, high-frequency applications. The device can be integrated into many types of switching systems, including DC-to-DC converters, non-isolated switching power supplies, regulators and inverters.

The R6015FNX is classified as an N-channel, depletion-mode FET. This type of FET is constructed from a substrate material with an insulation layer and a gate electrode that controls the flow of electrons through the channel. When a voltage is applied between the source and drain terminals, the gate voltage controls the width of the conducting channel, which controls the amount of current that can flow through the FET. The width of the channel is proportional to the gate voltage; a higher voltage results in a wider conducting channel and a higher current, while a lower voltage results in a narrower conducting channel and a lower current.

The R6015FNX is designed to operate with a maximum voltage of 12V, maximum current of 0.5A, and power dissipation of 0.3W. The junction temperature is limited to 175°C, and the maximum operating frequency is 2.4GHz. This device is constructed with an Avalanche Rugged technology for improved performance and dynamic performance at high switching frequencies and is suitable for high-frequency switching applications.

The main advantages of the R6015FNX are its low cost, high-frequency switching capability, low on-resistance and low power dissipation. The device has low operating and gate-source capacitances, allowing for fast switching speeds and better dynamic performance. The device also incorporates a 0.3qV threshold voltage, which allows for improved switching performance at high frequency applications, and a rugged avalanche technology for improved switching performance over a wide range of operating conditions. Additionally, the device has a maximum junction temperature of 175°C and a maximum drain-source voltage of 12V, making it suitable for applications requiring high temperature operation.

In conclusion, the R6015FNX is a cost-effective field-effect transistor designed for use in high-speed switching applications. Its low voltage and current requirements, combined with its high-frequency capabilities, make it ideal for use in a wide range of switching applications. The device is constructed with an Avalanche Rugged technology for improved performance at high frequency applications, and it boasts a 0.3qV threshold voltage for improved switching performance. Its low operating and gate-source capacitances allow for fast switching speeds and better dynamic performance, and its maximum junction temperature of 175°C makes it suitable for applications requiring high temperature operation.

The specific data is subject to PDF, and the above content is for reference