RF4E070BNTR Discrete Semiconductor Products

The RF4E070BNTR is a single enhancement mode N-channel MOSFET ( Metal Oxide Semiconductor Field Effect Transistor). It is a semiconductor technology device which normally is used in signal switching, signal amplification or power control. This device is designed and manufactured to meet the requirements of high-speed, low cost and high performance applications.

The field of application for the RF4E070BNTR MOSFET begins with general purpose switching applications, like fluid control, general-purpose power switching, etc. It is specially suited for applications in Analog and Digital Pulse-Width Modulation (PWM) circuits, Class-D amplifiers, Charge-Pump and Switch Mode power supplies, Resonant Mode Switches, and Differential and Low Noise Amplifiers.

The RF4E070BNTR has many advantages compared to other MOSFET types. It is designed to provide low On-State Resistance and low Gate Threshold Voltage, resulting in efficient and low power consumption performance, it is also designed to provide Ultra-low Noise-Free operation, along with low operating temperature in saturation mode.

The RF4E070BNTR is specially designed to operate in both high and low voltage conditions, and is capable of handling current up to 350mA, maximum. It is also highly resistant to electrical noise and has high reliability in terms of operational life. The device is rated for 500 V drain source voltage with a maximum drain source resistance of 100 mOhms.

The working principle of the RF4E070BNTR is based on the idea of charge transfer. When voltage is applied to the gate terminal of the transistor, it creates an electric field between the source and drain which is used to control the movement of electrons in the channel. The number of electrons that can pass through the channel depends on the voltage applied to the gate terminal. When the gate voltage is low, the number of electrons passing through the channel is small, resulting in a low current flow, while when the gate voltage is high, the number of electrons passing through the channel is high, resulting in a higher current flow.

The RF4E070BNTR is a great choice for applications requiring high speed, low power consumption and high reliability. With its low operating temperature, low noise and low On-State Resistance, it is an ideal option for a wide range of applications including switching, signal amplification, power control, and more. It also provides a high degree of compatibility with different controllers and other MOSFETs for easy integration into existing systems.