RF4E075ATTCR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	8-PowerUDFN
Supplier Device Package:	HUML2020L8
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	21.7 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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RF4E075ATTCR Application Field and Working Principle

RF4E075ATTCR transistors are a type of field-effect transistor (FET) that uses a semiconductor material to control the width of a channel between two contacts known as the source and drain. The width of the channel is controlled by a third electrode, called the gate, through which an electric field passes to switch the channel on and off. The device can be used in a wide range of applications, including electronics, communication systems, and medical equipment.The RF4E075ATTCR transistor is fabricated using silicon as the active material. The gate electrode is separated from the source and drain by a thin layer of silicon dioxide. This layer is used to control the capacitance which is necessary to ensure the transistor’s performance. The gate is connected to the source and drain by two metal wires which are separated by an air gap.The RF4E075ATTCR application field is referred to as an enhancement-mode FET because the gate-channel conductance increases when the gate voltage is applied. This means that the device is “on” when the gate voltage is positive, and “off” when the gate voltage is negative. The device can be used for switching purposes as well as for amplifying and attenuating signals.RF4E075ATTCR transistors are often used in radio frequency (RF) applications. In these applications, their features and properties are used for signal amplification, frequency modulation, and signal filtering. They can be found in radio receivers, cellular base stations, and telemetry systems.When a RF4E075ATTCR transistor is subjected to a current, the charge carriers located in the source-drain channel are affected by the current. This causes an electrical field that modifies the conductivity of the channel and thus controls the flow of current through it. When the gate voltage is above a certain threshold, the current flows freely in the channel, and the device is said to be in its “on” state. When the gate voltage drops to or below the threshold level, the current is blocked, and the device is in its “off” state.In addition to switching signals, the RF4E075ATTCR transistor can also be used for amplifying or attenuating them. This is done by changing the voltage applied to the gate electrode, and thereby varying the conductivity of the channel. The transistor can be operated in the linear region, where there is a direct relationship between the input current and output voltage.Overall, the RF4E075ATTCR transistor is a versatile device. Its use in electronics, communication systems, and medical equipment has made it a widely used device. The device’s properties allow it to be used as a switch as well as for amplifying and attenuating signals. Its use in RF applications provides a wide range of functionalities, such as signal modulation and filtering.

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