Allicdata Part #: | RF4E100AJTCRTR-ND |
Manufacturer Part#: |
RF4E100AJTCR |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 10A HUML2020L8 |
More Detail: | N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2... |
DataSheet: | RF4E100AJTCR Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.22860 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | 8-PowerUDFN |
Supplier Device Package: | HUML2020L8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RF4E100AJTCR is a self-protected medium power RF transistor from RF Micro Devices. It has high performance, efficiency, ruggedness and small size making it an all-around perfect choice for any application. The RF4E100AJTCR offers high gain performance, high efficiency, and ruggedness with a wide device linearity, allowing it to be used in a variety of applications including radio frequency (RF) amplifiers, transmitters and oscillators.
The device has three pins which in the order of importance are the gate, drain and source. The gate is used to control the flow of current and voltage from the source to the drain by controlling the voltage applied to the gate. The drain and source are the output connections where current flows through depending on the input applied to the gate. The transistor is a field-effect transistor (FET) with enhancement-mode operation meaning that the gate must be given a voltage for the device to conduct.
The RF4E100AJTCR is design for a specific application field, and it follows a very specific working principle. It is made from silicon-based epitaxial layer which is formed as two separate silicon layers doped on a single substrate. The two layers form a P-N junction, with one being the source and the other being the gate. The source and drain regions are isolated by an oxide layer, and the gate terminal is left open and surrounded by depletion region.
The transistor works by using the gate voltage to induce a depletion region which then controls the drain-source current flow. The alterations in the oxide layer cause changes in the depletion region which results in the transistor allowing the conduction of current. When the gate voltage is increases, the depletion region also increases, causing a decrease in the drain-source current. This process is known as enhancement mode operation, meaning that the gate must be given a voltage for the device to conduct.
The RF4E100AJTCR has many advantages over other FETs due to its unique design. It offers high power capabilities, high efficiency and linearity, as well as ruggedness which makes it reliable and suitable for a wide range of applications. Its simple circuitry and design make the device relatively easy to use.
In conclusion, the RF4E100AJTCR is a critical component for many applications due to its high power capabilities, high efficiency, linearity and ruggedness. Its design and use is simple and this offers users a reliable solution for their needs. The RF4E100AJTCR is a perfect choice for radio frequency (RF) applications such as amplifiers, transmitters and oscillators.
The specific data is subject to PDF, and the above content is for reference
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