RF4E110BNTR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerUDFN
Supplier Device Package:	HUML2020L8
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	11.1 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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RF4E110BNTR Application Field and Working Principle

The RF4E110BNTR is an enhancement-mode Field Effect Transistor (FET). The device has been designed to meet the requirements of portable radio applications. It utilizes advanced MOSFET packaging techniques and is highly efficient. The RF4E110BNTR is an ideal solution for RF signal amplification in cellular phones, two-way radios, Bluetooth, and Wi-Fi applications.This N-channel MOSFET has a wide-bandgap structure which provides superior reliability and ruggedness. The package is an SO-8, with an integrated circuit of 0.6 × 1.6 mm. The RF4E110BNTR offers a broad range of drain-source breakdown voltages (Vds) from 8V to 15V. It also has maximum current carrying capability of 1.5A and a breakdown voltage (Vbr) of 5V.The unique structural design of the RF4E110BNTR makes it better suited for high frequency applications. It has low input capacitance, low output capacitance, and low gate charge. These characteristics make the device highly efficient for RF applications, with low power dissipation. Additionally, the RF4E110BNTR offers excellent switching characteristics, with low on-state resistance and a high current rating.The RF4E110BNTR features a gate-source capacitance of 0.75 pF and a drain-source capacitance of 1.7pF. The on-state resistance is as low as 0.2Ω and the forward transconductance (gm) is 23.7 mS. The device has a drain-source breakdown voltage of 8V to 15V, gate-source breakdown voltage of 5V, and input capacitance of 30 µF.The RF4E110BNTR is highly versatile, offering robustness and reliability while consuming minimal power. It is able to work effectively in a wide range of operating temperatures from -55°C to +175°C. The device also has excellent electrical characteristics, including low gate-drain capacitance and low threshold voltage. The RF4E110BNTR is an ideal choice for RF amplification and signal processing applications. It has a wide range of operating voltages, currents, and capacitances. Furthermore, its high break-down voltages make it tolerant of electrostatic discharges, making it a safe and reliable choice for mobile communications networks.Overall, the RF4E110BNTR is an ideal device for many different applications. It provides superior performance, low power consumption, and excellent reliability and robustness. The wide range of characteristics makes it an ideal solution for RF signal amplification and signal processing.

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