RF4E070GNTR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerUDFN
Supplier Device Package:	HUML2020L8
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	220pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	4.8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	21.4 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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RF4E070GNTR Application Field and Working Principle

The RF4E070GNTR is an advanced silicon power MOSFET manufactured by STMicroelectronics. It is part of their STripFETfamily of devices which are designed for use in high power switching and DC-DC conversion applications. This device features an integrated diode and high drain-source breakdown voltage. It can dissipate up to 3 W of continuous power at a minimum drain-source voltage of 0.7 V, making it ideal for use in low voltage applications.

Features

The RF4E070GNTR features a relatively low on-resistance and a low gate charge, making it suitable for high frequency applications. It has a drain-source breakdown voltage rating of 70 V, a maximum drain current of 4 A, and a maximum gate-source voltage rating of 8 V. Additionally, this device has an integrated diode which protects it from reverse polarity conditions, allowing for the safe and reliable operation of the MOSFET.

Applications

The RF4E070GNTR is a versatile power MOSFET which can be used in a wide variety of applications. It can be used in automotive, industrial, solar, and lighting applications. It is also suitable for switch mode power supplies, voltage regulators, and DC-DC converters.

Working Principle

The RF4E070GNTR is a type of FET (Field Effect Transistor). These transistors operate by using the electric field of the gate, which is applied to the source, to control the current that flows between the drain and source. This mechanism of operation allows for much better control of the power supply than with traditional bipolar transistors, which use current flow to control the voltage output. As such, the FET is a much more efficient power management device. When a voltage is applied to the gate, it creates an electric field which attracts the electrons from the source to the drain. This causes a build-up of electrons at the drain, resulting in a decrease in the resistance between the source and drain. This allows a higher current to flow between them and results in an amplification of the voltage present at the source. This is known as the saturation effect. The amount of voltage which is amplified will depend on the size of the gate and the source, as well as the amount of charge that is on the gate. The greater the charge on the gate and the larger the size, the more the voltage will be amplified. When the gate voltage is reversed, the electric field weakens, reducing the amount of electrons travelling from the source to the drain. This reduces the current between them and therefore the voltage present at the source is no longer amplified. This is known as the cutoff effect. In summary, the RF4E070GNTR is a high power silicon MOSFET which is suitable for a wide range of applications. It features a low on-resistance and a low gate charge, making it well-suited for high frequency applications. It has an integrated diode which protects it from reverse polarity conditions, allowing for the safe and reliable operation of the MOSFET. The FET works by using the electric field of the gate to control the current that flows between the source and the drain, allowing it to provide an amplification of the source voltage.

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