RF4E110GNTR Discrete Semiconductor Products |
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Allicdata Part #: | RF4E110GNTRTR-ND |
Manufacturer Part#: |
RF4E110GNTR |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 11A 8-HUML |
More Detail: | N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount HUML2... |
DataSheet: | RF4E110GNTR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.11791 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerUDFN |
Supplier Device Package: | HUML2020L8 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 504pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.3 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RF4E110GNTR belongs to a specific field of transistors known as FETs or Field Effect Transistors. It is comprised of a single MOSFET, which allows for increased power density over the use of other transistors. Because of this, it is a popular choice for applications where space is at a premium. This type of transistor is rapidly gaining acceptance in the electronics industry due to its superior performance characteristics.
The RF4E110GNTR is offered in a single-coil package, with a maximum drain-source voltage of 100V. It features a maximum continuous drain current of 17A, and can comfortably handle larger peak currents. Furthermore, it offers excellent thermal characteristics and reliability, making it a great option for applications where power dissipation is a primary concern. Additionally, its fast switching speed and attractive cost structure ensure that it is a good fit for both digital and analog circuits.
How, exactly, does the RF4E110GNTR operate? The most basic explanation is that it is a two-terminal silicon-based field effect device. A drain and source, usually connected to an electric current source, are connected to a controllable gate. When an input voltage is applied to the gate, it modulates the conductivity of the drain-source channel and the current between them. This gate modulation is what enables the RF4E110GNTR to regulate current, providing a powerful and effective solution for many applications.
As mentioned, the RF4E110GNTR is ideal for applications where space is at a premium. Digital circuits often require attention to miniaturization, as well as high switching speeds, these characteristics make the RF4E110GNTR an ideal solution. It is often used in motor controllers, power switches, DC-DC converters, motor drivers, power supplies, and voltage regulators.
On the other hand, the RF4E110GNTR is also a good choice in analog circuits. It is often used in amplifiers, phase controllers, comparators, signal shapers, multiplexers, and oscillators. Its reliability and performance under varying voltage and temperature conditions make it a perfect fit for these applications as well.
In summary, the RF4E110GNTR is a powerful, reliable, and cost effective solution for many applications. Its superior thermal characteristic, high current capabilities, fast switching speeds, and attractive cost structure make it a popular choice in digital and analog circuits. Its ability to fit in tight spaces and modulate conductivity ensure it is an ideal option in almost any situation where a reliable transistor is needed.
The specific data is subject to PDF, and the above content is for reference
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