RN1404,LF Allicdata Electronics
Allicdata Part #:

RN1404LF-ND

Manufacturer Part#:

RN1404,LF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F S-MINI PLN (LF) TRANSIS
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1404,LF datasheetRN1404,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02434
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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A single pre-biased transistor, such as the RN1404, is part of the Bipolar Junction Transistor (BJT) family, and is often used in various fields such as power amplifiers, microphone preamps, and switch applications. In modern transistor designs, prefabricated transistors are often used to improve efficiency and reliability, thus making the entire production process easier. A single pre-biased transistor, such as the RN1404, is just such a device.

The RN1404 single pre-biased transistor consists of a PNP (positive-negative-positive) configuration made up of three individual semiconductor layers. This PNP configuration is isolated by an insulating layer known as the \'collector gap\', which ensures that no current flows through the device until a predetermined voltage is applied. In this arrangement, the collector layer supplies the current from the device and serves to control the current flux in the device. The base layer is responsible for controlling the amount of current that is allowed to pass through the device, while the emitter layer is responsible for supplying the output current. The RN1404 can be used in various circuit designs, including those that require high input impedance and low distortion.

In terms of the RN1404\'s application field, it is most appropriate for use in modern audio applications. This is due to the fact that the current control feature of the RN1404 helps to reduce distortion, while also providing a large amount of current headroom. The RN1404 is also widely used as a logic switch and amplifier indigital audio applications. Additionally, the RN1404 has been found to provide excellent performance when connected to power amplifiers and microphone preamps. The RN1404 can also be used for dimming LEDs, creating flashing displays, and for providing protection against surges in current.

At a more fundamental level, the RN1404 operates by amplifying a small voltage (known as the base voltage) that is applied to the base layer. This voltage causes electrons to move from the emitter to the collector layer, thus creating a small current flowing between the collector and the emitter. This current is then multiplied by the current gain of the RN1404, resulting in an amplified output at the emitter layer. In the case of a PNP BJT such as the RN1404, the amplified current is out of phase with the base voltage.

The RN1404 is one of the most popular single pre-biased transistors available today, due its vast application field and its excellent performance. While other transistors may offer higher current headroom or faster switching times, the RN1404\'s combination of features and qualities makes it a great option for various audio, logic switching, and power applications. Additionally, its lower cost and easy manufacturing process make it a great choice for those looking for a cost-effective and reliable transistor.

The specific data is subject to PDF, and the above content is for reference

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