RN1412TE85LF Allicdata Electronics
Allicdata Part #:

RN1412TE85LFTR-ND

Manufacturer Part#:

RN1412TE85LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.2W S-MINI
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1412TE85LF datasheetRN1412TE85LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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The RN1412TE85LF is a single pre-biased bipolar transistor. It provides a high-speed switching and high gain performance for application areas such as power control, amplification, and switching. This transistor is capable of switching high-current loads, such as motors and relays. Because of its pre-biased design, it has ultra-low power consumption and is ideal for battery-powered applications. It is typically used in automotive, motor control, LED dimming, and home appliances.

The RN1412TE85LF transistor consists of three terminals: the base, collector, and emitter. The base terminal controls the flow of current between the collector and the emitter. The collector terminal is connected to the power source and collects current from the base. The emitter terminal is connected to the load and provides the current to the load. The pre-biased feature of the RN1412TE85LF allows the user to control current flow in either direction by adjusting the bias connection.

The principle of operation of the RN1412TE85LF is simple. When a small base voltage is applied, a large collector-emitter voltage occurs. This is based on the amplification effect of the transistor. When current passes through the base terminal, it will be amplified and scaled up. This amplified current is then driven into the collector and emitted at the emitter terminal. This results in an amplified current flow between the collector and the emitter.

The RN1412TE85LF provides a variety of features and benefits. For one, it offers high-speed switching and low saturation voltage. Additionally, it has a low Drain to Source On Resistance, which reduces power consumption and increases efficiency. Furthermore, the transistor can handle large currents and is ideal for applications with very high power loads. Lastly, the high breakdown voltage of the RN1412TE85LF provides additional protection to the device from catastrophic breakdown.

In summary, the RN1412TE85LF is a single pre-biased bipolar transistor, which offers a high-speed switching and high gain performance for a range of applications. It is capable of switching high current loads and has ultra-low power consumption due to its pre-biased feature. Additionally, it has a variety of features, such as high-speed switching, low saturation voltage, and high breakdown voltage. The RN1412TE85LF is typically used in automotive, motor control, LED dimming, and home appliances.

The specific data is subject to PDF, and the above content is for reference

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