| Allicdata Part #: | RN1601(TE85LF)TR-ND |
| Manufacturer Part#: |
RN1601(TE85L,F) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS 2NPN PREBIAS 0.3W SM6 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
| DataSheet: | RN1601(TE85L,F) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | 250MHz |
| Power - Max: | 300mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | SM6 |
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The RN1601 (TE85L,F) is a Pre-Biased Array Bipolar Junction Transistor (BJT) manufactured by Toshiba. It is a semiconductor device that is widely used in various industrial and consumer electronic circuits. The RN1601 comes in a TO-3 package with four pins. The device has a collector-emitter breakdown voltage of 80V and a maximum collector current of 200mA. The package is also equipped with built-in ESD protection.
The applications of the RN1601 include linear power amplifiers, power switching, audio amplifiers, voltage regulators, and motor controllers. This device can be used to provide a range of voltages or currents in order to power a wide variety of different devices. It can also be used as an antenna switch in order to change the direction of an RF signal.
The working principle of the RN1601 is based on the principle of transistor biasing. A transistor is biased when a voltage or current is applied to it in order to turn it on or off. In the case of the RN1601, the device is pre-biased so that it is in an active state when no additional voltage is applied. This means that the device can switch between on and off states without the need for any additional external voltage sources.
The RN1601 also has a high switching speed, which makes it suitable for use in a wide range of applications. The device can switch off and on in less than 10 nanoseconds. This makes it ideal for applications that require fast switching, such as motor controllers and power switching. Additionally, the device has a low noise performance, which makes it suitable for audio amplifiers.
The RN1601 is also an easy device to use, with only four pins to connect. Its pre-biasing also makes it easy to use, as it does not require additional external voltages or currents in order to function properly. Additionally, the device comes in a robust TO-3 package, which provides superior protection from environmental damage.
In conclusion, the RN1601 Pre-Biased Array Bipolar Junction Transistor is a versatile device that is widely used in a wide array of industrial and consumer electronics. Its pre-biased nature makes it easy to use and its high switching speed makes it suitable for a wide range of applications. Additionally, the device comes in a robust package that provides superior protection against environmental damage. All in all, the RN1601 is an excellent choice for a wide range of applications that require fast switching, high noise performance, and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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RN1601(TE85L,F) Datasheet/PDF