RN1602(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1602(TE85LF)TR-ND

Manufacturer Part#:

RN1602(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.3W SM6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1602(TE85L,F) datasheetRN1602(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Description

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Bipolar Junction Transistors (BJT) are transistors commonly used in many different kinds of integrable circuits. The RN1602(TE85L,F), also known as the "TE85L,F Array", is a pre-biased transistor array designed to provide a simple and efficient single-source signal switching capability. This array was designed by the company Renesas Technology.

The main advantage of this array is that it has two transistors pre-biased to output signal, which reduces the minimum operating voltage and the need for additional circuitry. The device can be used for signal switching applications in electronic circuits, such as power supply control, switching regulated loads, or as an interface for logic and controllers.

RN1602(TE85L,F) transistors are made with an NMOS fabrication process and consist of a PNP substrate and NPN transistor. The substrate has a high voltage and low noise characteristics that make it suitable for a wide range of applications. The transistors have a maximum current rating of 500mA, with a maximum supply voltage of 15V.

RN1602(TE85L,F) has several advantages in terms of its workability. First, due to the pre-biased nature of the device, its output signals are limited to a specific logic level, therefore reducing the complexity of the logic circuit. Second, it has a low-noise output, making it suitable for switching power in low-noise environments. Third, the device has a wide range of operating voltages and currents, making it suitable for use in various kinds of applications.

The internal structure of the device consists of an N-type substrate with an NPN transistor and a PNP transistor. The PNP transistor is connected to a charged capacitor which supplies low-voltage bias to the other transistor, which acts as a load. The NPN transistor will then be triggered when the load current exceeds the predetermined threshold value of the capacitor.

The device can be used for a variety of applications, including signal switching, power supply control, switching regulated loads, or as an interface for logic and controllers. The device is a useful tool for the development of both analog and digital circuits. It is an important component for the development of analog and digital signal processing systems.

In conclusion, the RN1602(TE85L,F) is a pre-biased transistors array designed by Renesas Technology. This device is suitable for a variety of signal switching applications in various environments and has several advantages in terms of workability. This device can be used as an interface for logic and controllers, switching regulated loads, or signal switching applications in circuitry.

The specific data is subject to PDF, and the above content is for reference

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