Allicdata Part #: | RN1611(TE85LF)TR-ND |
Manufacturer Part#: |
RN1611(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1611(TE85L,F) Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TE85RF/F Arrays – Pre-Biased Bipolar Transistor Arrays Introduction
Transistor technology is advancing faster than ever before, resulting in smaller components that are increasingly powerful and capable of performing more functions than their predecessors. One of the most recent advancements in transistor technology is the pre-biased bipolar transistor array, and the TE85RF/F series is an excellent example of this. This device is specifically designed for consumer and commercial applications, with an impressive power output and a wide array of features that make it ideal for many different applications.
Features of TE85RF/F Transistor Arrays
The TE85RF/F is a pre-biased, bipolar transistor array designed for high-speed, high-sensitivity applications. It is constructed of four NPN transistors in a single package, giving it a high integration density and improved performance when compared to conventional devices. Furthermore, this device allows for improved power output, as well as improved signal-to-noise ratio, which makes it highly suitable for a wide range of signal processing applications. This transistor array is also designed with a low-cost, low-voltage, low-current drive circuit that enables it to operate reliably at high speeds. Additionally, this device has low thermal resistance, allowing it to operate without overheating.
TE85RF/F Application
The TE85RF/F pre-biased bipolar transistor array is suitable for a wide range of applications, including high-speed data conversion, frequency synthesizers, signal processing and ASK/FSK/MSK modulated signal output. Furthermore, this device is often used for motion control, robotics and industrial control systems. In addition, the TE85RF/F is also used in a wide range of consumer electronics applications, including audio amplifiers, LCD/LED displays and gaming consoles. Additionally, this device is also suitable for medical applications, such as monitoring blood pressure.
TE85RF/F Working Principle
The TE85RF/F pre-biased bipolar transistor array is based on the common base circuit. This circuit consists of four transistors which are connected in series to form the array. These transistors are designed with a high-input impedance and are able to operate at high frequencies. The transistors are mounted in a single-ended configuration, and this allows for improved matching characteristics and excellent power output. Each transistor is designed with a pre-biased collector-emitter junction, which helps reduce noise and improve power-handling capabilities. This device also allows for improved signal-to-noise ratio and a higher operating frequency compared to conventional transistors.
In summary, the TE85RF/F pre-biased bipolar transistor array is an excellent device for a wide range of applications. This device has an impressive power output, low thermal resistance and a wide range of features, making it highly suitable for many different applications. Additionally, its low-cost, low-voltage and low-current drive circuit makes it highly reliable and ideal for high-speed, high-sensitivity applications. Finally, its pre-biased collector-emitter junction gives this device improved matching characteristics and excellent power-handling capabilities, making it a great choice for a wide range of signal processing applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RN1605TE85LF | Toshiba Semi... | 0.04 $ | 3000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1607(TE85L,F) | Toshiba Semi... | 0.06 $ | 3000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1611(TE85L,F) | Toshiba Semi... | 0.06 $ | 3000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1604(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1609(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1608(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1601(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1610(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1602(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1673(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
RN1606(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2NPN PREBIAS 0.3W S... |
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...