RN1608(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1608(TE85LF)TR-ND

Manufacturer Part#:

RN1608(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.3W SM6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1608(TE85L,F) datasheetRN1608(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Description

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A RN1608 (TE85L, F) is a particular type of transistor array, with pre-biased operation. They are commonly used in a variety of applications and can be found in many electronic devices, such as motor drives, invertors and other automotive electronics. The RN1608 is a n-channel dual FET array. It has three packages, an SC-75 (TO-252), an SC-82 (TO-253) and an SC-89 (TO-258).

The RN1608 is a pre-biased type of FET array. This means that, unlike other types of FETs, the RN1608 does not require a large amount of external circuitry for it to function, thus greatly reducing system complexity and cost. It comprises of two FETs (F1 and F2) connected in parallel, and one control element (Q1) connected in series.

The activating of F1 and F2 is done simultaneously, and their resistances are controlled by Q1. There are two separate biasing circuits for F1 and F2, respectively; this circuitry is referred to as the biasing module. Each FET also has two control terminals (Source 1 and Source 2). When Source 1 is connected to the power supply, the full bias voltage is applied to the FET, thus controlling the resistance of F1 and F2. This biasing circuitry provides a constant current source, allowing the FETs to work at the same resistance no matter what the load current is.

The RN1608 has a P-Channel FET, or short-channel diode, (Q1) which is used to control the resistance of both F1 and F2 during operation. It is activated after the Source 1 and Sources 2 are connected to the power and ground. This activation process produces a voltage drop across the FETs, which is used to control their respective resistances. The P-Channel FET also acts as a protection mechanism, as it will turn off during abnormal conditions such as an overcurrent or overvoltage.

The RN1608 can be used in a variety of applications. These include motor drives, inverters, data communication systems, automotive temperature control systems and even power supplies. Its high efficiency and low power consumption has made it one of the most used pre-biased FET array transistors in the automotive and industrial markets.

The RN1608 is a widely used pre-biased FET array that provides efficient, low power operation. Its simple design and two separate biasing circuits make it a great choice for a variety of automotive, industrial and other applications. Its combination of high efficiency and low power consumption make it one of the most popular pre-biased FET arrays today. Thanks to its flexibility and reliability, the RN1608 is an ideal choice for applications that require an efficient power management solution.

The specific data is subject to PDF, and the above content is for reference

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